Kizhaev K Yu

Publications in Math-Net.Ru

1. CONTROL OF THE LENGTH OF TRANSITION LAYERS UNDER LIQUID-PHASE HETEROEPITAXY (LPHE) IN THE INGAASP/INP SYSTEM
   
   Zhurnal Tekhnicheskoi Fiziki, 60:3 (1990),  123–128
2. CHARACTERISTICS OF OBLITERATION OF WAVE-GUIDE PROFILE SURFACE IN INGAASP/INP ROS LASERS
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:8 (1990),  5–9
3. CHARACTERISTICS OF THE GENERATION IN INGAASP/INP HIGHLY DETUNED ROS-LASERS
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:3 (1988),  267–273
4. Continuous-wave distributed-feedback InGaAsP (λ = 1.55 μm) injection heterolasers
   
   Kvantovaya Elektronika, 15:11 (1988),  2196–2198
5. Spike regime in distributed feedback heterolasers
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:10 (1987),  601–604
6. Power separate confinement $In\,Ga\,As\,P/In\,P$-based lasers for FOCD ($\lambda=1,55$ mu-m, $T=300$ K, $P=50$ mVt)
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:9 (1987),  535–537
7. Heterolasers with distributed feedback ($\lambda=1.55$ mu-m), operating in continuous regime at room-temperature
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:9 (1987),  513–517
8. Time characteristics of $In\,Ga\,As\,P/In\,P$ emission of injection-lasers with quantum-dimensional active layers, obtained by the liquid epitaxy method
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:3 (1987),  141–146
9. Widening transition layers in heterostructures, based on $In\,Ga\,As\,P$ solid-solutions, caused by elastic tensions
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:3 (1987),  132–136
10. Experimental Observation of Size-Quantization Effects in Heterolaser Structures with Random Variations of Quantum-Size Active-Layer Thickness
    
    Fizika i Tekhnika Poluprovodnikov, 20:7 (1986),  1222–1226
11. Formation of transition layers in heterostructures based on $Ga\,As-Al\,As$ solid-solutions during the liquid-phase epitaxy
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:6 (1986),  335–341
12. Low-threshold in $In\,Ga\,As\,P/In\,P$ lasers of divided limitation with $\lambda=1.3$-mu-m and $\lambda =1.55$-mu-m ($I_{\text{threshold}}=600-700\,\text{A/cm}^{2}$)
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:4 (1986),  210–215
13. Influence of random changes in the quantum-dimensional active layer thickness on heterolaser emitting characteristics
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:4 (1986),  205–210
14. Epitaxy $In\,Ga\,As\,P/In\,P$ from the migrating limited liquid-phase volume
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:16 (1985),  961–968