Kuksenkov D V

Publications in Math-Net.Ru

1. Генерация пикосекундных (${\tau=1.7}$ пс) импульсов излучения в InGaAsP/InP (${\lambda=1.535}$ мкм) гетеролазере со сверхбыстрым насыщающимся поглотителем
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 18:3 (1992),  38–41
2. HIGH-SPEED PROPERTIES OF INGAASP-INP (LAMBDA=1.55 MU-M) ROS-LASERS WITH SHORT-WAVE TUNING
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:21 (1990),  61–65
3. CHARACTERISTICS OF OBLITERATION OF WAVE-GUIDE PROFILE SURFACE IN INGAASP/INP ROS LASERS
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:8 (1990),  5–9
4. INJECTION HETEROLASERS WITH DISTRIBUTED FEEDBACK IN INGAASSB/GASB SYSTEM
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:2 (1990),  58–62
5. EFFECT OF THE SATURATING ABSORBER DOMAIN ON CHARACTERISTICS OF INGAASP/INP DFB-LASERS WITH STRONG SHORT-WAVE DETUNING
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 15:17 (1989),  47–51
6. GENERATION AND REGISTRATION OF PICOSECOND OPTICAL PULSES IN INGAASP/INP (LAMBDA= 1.5-1.6 MU-M) LASERS WITH PASSIVE QUALITY MODULATION
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 15:13 (1989),  6–9
7. INTERIOR GENERATION OF 2-ND HARMONICS IN INGAASP/INP (LAMBDA=1,55 MU-M) SEPARATE CONFINEMENT LASERS
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 15:9 (1989),  67–72
8. DFB-GENERATION IN INGAASP/INP-LASERS WHERE (LAMDA=1.5-1.6 MU-M) WITH A COMPOUND ACTIVE LAYER
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:12 (1988),  1082–1088
9. CHARACTERISTICS OF THE GENERATION IN INGAASP/INP HIGHLY DETUNED ROS-LASERS
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:3 (1988),  267–273
10. Continuous-wave distributed-feedback InGaAsP (λ = 1.55 μm) injection heterolasers
    
    Kvantovaya Elektronika, 15:11 (1988),  2196–2198
11. Spike regime in distributed feedback heterolasers
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:10 (1987),  601–604
12. Heterolasers with distributed feedback ($\lambda=1.55$ mu-m), operating in continuous regime at room-temperature
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:9 (1987),  513–517
13. Time characteristics of $In\,Ga\,As\,P/In\,P$ emission of injection-lasers with quantum-dimensional active layers, obtained by the liquid epitaxy method
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:3 (1987),  141–146