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Smirnitskiĭ Vladimir Borisovich

Publications in Math-Net.Ru

  1. CONTROL OF THE LENGTH OF TRANSITION LAYERS UNDER LIQUID-PHASE HETEROEPITAXY (LPHE) IN THE INGAASP/INP SYSTEM

    Zhurnal Tekhnicheskoi Fiziki, 60:3 (1990),  123–128
  2. HIGH-SPEED PROPERTIES OF INGAASP-INP (LAMBDA=1.55 MU-M) ROS-LASERS WITH SHORT-WAVE TUNING

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:21 (1990),  61–65
  3. CHARACTERISTICS OF OBLITERATION OF WAVE-GUIDE PROFILE SURFACE IN INGAASP/INP ROS LASERS

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:8 (1990),  5–9
  4. EFFECT OF THE SATURATING ABSORBER DOMAIN ON CHARACTERISTICS OF INGAASP/INP DFB-LASERS WITH STRONG SHORT-WAVE DETUNING

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 15:17 (1989),  47–51
  5. GENERATION AND REGISTRATION OF PICOSECOND OPTICAL PULSES IN INGAASP/INP (LAMBDA= 1.5-1.6 MU-M) LASERS WITH PASSIVE QUALITY MODULATION

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 15:13 (1989),  6–9
  6. INTERIOR GENERATION OF 2-ND HARMONICS IN INGAASP/INP (LAMBDA=1,55 MU-M) SEPARATE CONFINEMENT LASERS

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 15:9 (1989),  67–72
  7. DFB-GENERATION IN INGAASP/INP-LASERS WHERE (LAMDA=1.5-1.6 MU-M) WITH A COMPOUND ACTIVE LAYER

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:12 (1988),  1082–1088
  8. CHARACTERISTICS OF THE GENERATION IN INGAASP/INP HIGHLY DETUNED ROS-LASERS

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:3 (1988),  267–273
  9. Continuous-wave distributed-feedback InGaAsP (λ = 1.55 μm) injection heterolasers

    Kvantovaya Elektronika, 15:11 (1988),  2196–2198
  10. Heteroepitaxial $Al_{x}\,Ga_{1-x}\,P$ wave-guides with parabolic shape of the index of refraction for hybride integral-optical systems

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:18 (1987),  1098–1103
  11. Low-threshold injection heterolasers with electric limits developed by the pulse laser effect

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:15 (1987),  913–918
  12. Spike regime in distributed feedback heterolasers

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:10 (1987),  601–604
  13. Heterolasers with distributed feedback ($\lambda=1.55$ mu-m), operating in continuous regime at room-temperature

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:9 (1987),  513–517
  14. Time characteristics of $In\,Ga\,As\,P/In\,P$ emission of injection-lasers with quantum-dimensional active layers, obtained by the liquid epitaxy method

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:3 (1987),  141–146
  15. Experimental Observation of Size-Quantization Effects in Heterolaser Structures with Random Variations of Quantum-Size Active-Layer Thickness

    Fizika i Tekhnika Poluprovodnikov, 20:7 (1986),  1222–1226
  16. Index of $Ga\,In\,As\,P$ solid-solution refraction on the wavelength of laser generation

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:13 (1986),  827–831
  17. Injection heterolasers $Jn\,Ga\,As\,P/Jn\,P$ ($\lambda=1,5$-mu-m) with the distributed feedback obtained by liquid-phase and gaseous epitaxies

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:5 (1986),  296–300
  18. Influence of random changes in the quantum-dimensional active layer thickness on heterolaser emitting characteristics

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:4 (1986),  205–210
  19. INJECTION INGAASP/INP HETEROLASER WITH DISTRIBUTED FEEDBACK OBTAINED BY INTERFERENCE LASER ANNEALING

    Zhurnal Tekhnicheskoi Fiziki, 55:10 (1985),  2034–2036
  20. Concave diffraction lattices on the monocrystal surface

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:19 (1985),  1172–1175
  21. The effect of nanosecond laser-pulses on the melting of graphite and diamonds

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:15 (1985),  921–924
  22. CONCENTRATING HOLOGRAPHIC DIFFRACTION LATTICE .2. EXPERIMENTAL RESULTS

    Zhurnal Tekhnicheskoi Fiziki, 54:10 (1984),  1948–1955
  23. CONCENTRATING HOLOGRAPHIC DIFFRACTION LATTICE .1. THEORY

    Zhurnal Tekhnicheskoi Fiziki, 54:10 (1984),  1942–1947
  24. COHERENT EMISSION GENERATION AND PECULIARITIES OF THE WAVEGUIDE RESTRICTION IN GASB-GA(1-X)INXSB(1-Y)ASY HETEROSTRUCTURES

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 10:17 (1984),  1081–1085
  25. POLARIZATION EFFECTS IN HETEROLASERS WITH DISTRIBUTED REVERSE COUPLING

    Zhurnal Tekhnicheskoi Fiziki, 53:8 (1983),  1560–1567
  26. « Горячее» ионное легирование $p$-InSb серой (свойства $n{-}p$-переходов)

    Fizika i Tekhnika Poluprovodnikov, 17:11 (1983),  1923–1925
  27. Интерференционный лазерный отжиг полупроводников

    Fizika i Tekhnika Poluprovodnikov, 17:2 (1983),  235–241
  28. Полупроводниковый лазер (${\lambda=1.55}$ мкм) с распределенной обратной связью в первом порядке, полученной импульсным лазерным отжигом

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 9:21 (1983),  1294–1297
  29. Полупроводниковая волноводная гетероструктура монолитно-интегрированная с оптической схемой интерференционной засветки

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 9:17 (1983),  1047–1050
  30. Перестраиваемые полупроводниковые лазеры с распределенной обратной связью и накачкой инжекционным гетеролазером

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 9:17 (1983),  1043–1046
  31. Эпитаксиальная кристаллизация напыленных слоев кремния на подложках GaP в условиях интерференционного лазерного отжига

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 9:14 (1983),  850–853

© Steklov Math. Inst. of RAS, 2024