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Publications in Math-Net.Ru
Liquid phase epitaxial growth of GaInAsP/InP laser structures
Kvantovaya Elektronika
,
15
:11 (1988),
2266–2269
High-performance 1.3-μm InGaAsP/InP heterostructures formed by two-phase liquid epitaxy
Kvantovaya Elektronika
,
15
:11 (1988),
2262–2265
Relationship between the
p-n
junction position and the threshold current of stripe lasers emitting in the 1.3-μm range
Kvantovaya Elektronika
,
15
:11 (1988),
2210–2213
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Steklov Math. Inst. of RAS
, 2024