Knauer A

Publications in Math-Net.Ru

1. Doping inhomogeneities and behavior of compensation of n-type GaAs and InP
   
   Kvantovaya Elektronika, 15:11 (1988),  2301–2303
2. Dependence of the photoluminescence density on surface preparation and properties of n-type InP
   
   Kvantovaya Elektronika, 15:11 (1988),  2276–2279
3. Calculation of the yield of fault-free laser diodes from the characteristics of the (100)InP substrate material used in epitaxial double heterostructures
   
   Kvantovaya Elektronika, 15:11 (1988),  2273–2275