Ershov Aleksey Valentinovich

Publications in Math-Net.Ru

1. MOCVD growth of InGaAs metamorphic heterostructures for photodiodes with low dark current
   
   Fizika i Tekhnika Poluprovodnikov, 57:6 (2023),  495–500
2. Investigation of the effect of optical radiation on resistive switching of MIS-structures based on ZrO$_2$(Y) on Si(001) substrates with Ge nanoislands
   
   Fizika i Tekhnika Poluprovodnikov, 56:8 (2022),  723–727
3. Modification of ge structural-morphological properties in multi-layered nanoperiodic Al$_{2}$O$_{3}$/Ge structure with intermediate Si layers
   
   Fizika i Tekhnika Poluprovodnikov, 55:10 (2021),  882–889
4. Effect of optical illumination on resistive switching in MOS stacks based on ZrO$_2$(Y) films with Au nanoparticles
   
   Fizika i Tekhnika Poluprovodnikov, 55:9 (2021),  754–757
5. Electrical and photoelectric properties of $\alpha$-Si/SiO$_{2}$ and $\alpha$-Ge/SiO$_{2}$ multilayer nanostructures on $p$-Si substrates annealed at various temperatures
   
   Fizika i Tekhnika Poluprovodnikov, 54:10 (2020),  1112–1116
6. Ge/Si core/shell quantum dots in an alumina matrix: influence of the annealing temperature on the optical properties
   
   Fizika i Tekhnika Poluprovodnikov, 54:2 (2020),  129–137
7. Chemical and phase compositions of multilayer nanoperiodic $a$-SiO$_{x}$/ZrO$_{2}$ structures subjected to high-temperature annealing
   
   Fizika Tverdogo Tela, 59:6 (2017),  1183–1191
8. Influence of the deposition and annealing temperatures on the luminescence of germanium nanocrystals formed in GeO$_{x}$ films and multilayer Ge/SiO$_{2}$ structures
   
   Fizika Tverdogo Tela, 59:5 (2017),  965–971
9. Formation of silicon nanocrystals in multilayer nanoperiodic $a$-SiO$_{x}$/insulator structures from the results of synchrotron investigations
   
   Fizika i Tekhnika Poluprovodnikov, 51:3 (2017),  363–366
10. Method for narrowing the directional pattern of an InGaAs/GaAs/AlGaAs multiwell heterolaser
    
    Fizika i Tekhnika Poluprovodnikov, 50:11 (2016),  1509–1512
11. Formation of Si nanocrystals in multilayered nanoperiodic Al$_2$O$_3$/SiO$_x$/Al$_2$O$_3$/SiO$_x$/$\dots$/Si(100) structures: Synchrotron and photoluminescence data
    
    Fizika i Tekhnika Poluprovodnikov, 49:3 (2015),  421–425
12. Annealing-induced evolution of the structural and morphological properties of a multilayer nanoperiodic SiO$_x$/ZrO$_2$ system containing Si nanoclusters
    
    Fizika i Tekhnika Poluprovodnikov, 48:1 (2014),  44–48
13. Synchrotron study of the formation of nanoclusters in Al$_2$O$_3$/SiO$_x$/Al$_2$O$_3$/SiO$_x$/$\dots$/Si(100) multilayer nanostructures
    
    Fizika i Tekhnika Poluprovodnikov, 47:10 (2013),  1327–1334
14. Thermal evolution of the morphology, structure, and optical properties of multilayer nanoperiodic systems produced by the vacuum evaporation of SiO and SiO$_2$
    
    Fizika i Tekhnika Poluprovodnikov, 47:4 (2013),  460–465
15. Semiconductor lasers with broad tunnel-coupled waveguides, emitting at a wavelength of 980 nm
    
    Kvantovaya Elektronika, 26:3 (1999),  217–218
16. Semiconductor lasers emitting at the 0.98 μm wavelength with radiation coupling-out through the substrate
    
    Kvantovaya Elektronika, 25:7 (1998),  622–624
17. Electric and Optical Properties of the $a$-Si$_{1-x$Ge$_{x}$} Semiconductor
    
    Fizika i Tekhnika Poluprovodnikov, 20:7 (1986),  1288–1291