Ershov A V

Publications in Math-Net.Ru

1. Modification of ge structural-morphological properties in multi-layered nanoperiodic Al$_{2}$O$_{3}$/Ge structure with intermediate Si layers
   
   Fizika i Tekhnika Poluprovodnikov, 55:10 (2021),  882–889
2. Effect of optical illumination on resistive switching in MOS stacks based on ZrO$_2$(Y) films with Au nanoparticles
   
   Fizika i Tekhnika Poluprovodnikov, 55:9 (2021),  754–757
3. Electrical and photoelectric properties of $\alpha$-Si/SiO$_{2}$ and $\alpha$-Ge/SiO$_{2}$ multilayer nanostructures on $p$-Si substrates annealed at various temperatures
   
   Fizika i Tekhnika Poluprovodnikov, 54:10 (2020),  1112–1116
4. Ge/Si core/shell quantum dots in an alumina matrix: influence of the annealing temperature on the optical properties
   
   Fizika i Tekhnika Poluprovodnikov, 54:2 (2020),  129–137
5. Chemical and phase compositions of multilayer nanoperiodic $a$-SiO$_{x}$/ZrO$_{2}$ structures subjected to high-temperature annealing
   
   Fizika Tverdogo Tela, 59:6 (2017),  1183–1191
6. Influence of the deposition and annealing temperatures on the luminescence of germanium nanocrystals formed in GeO$_{x}$ films and multilayer Ge/SiO$_{2}$ structures
   
   Fizika Tverdogo Tela, 59:5 (2017),  965–971
7. Formation of silicon nanocrystals in multilayer nanoperiodic $a$-SiO$_{x}$/insulator structures from the results of synchrotron investigations
   
   Fizika i Tekhnika Poluprovodnikov, 51:3 (2017),  363–366
8. Method for narrowing the directional pattern of an InGaAs/GaAs/AlGaAs multiwell heterolaser
   
   Fizika i Tekhnika Poluprovodnikov, 50:11 (2016),  1509–1512
9. Semiconductor lasers with broad tunnel-coupled waveguides, emitting at a wavelength of 980 nm
   
   Kvantovaya Elektronika, 26:3 (1999),  217–218
10. Semiconductor lasers emitting at the 0.98 μm wavelength with radiation coupling-out through the substrate
    
    Kvantovaya Elektronika, 25:7 (1998),  622–624
11. Electric and Optical Properties of the $a$-Si$_{1-x$Ge$_{x}$} Semiconductor
    
    Fizika i Tekhnika Poluprovodnikov, 20:7 (1986),  1288–1291