Plotnikov A F

Publications in Math-Net.Ru

1. New optoelectronic erasable storage medium (review)
   
   Kvantovaya Elektronika, 14:3 (1987),  437–451
2. New reusable optoelectronic storage medium
   
   Kvantovaya Elektronika, 14:1 (1987),  190–192
3. Photoluminescence of amorphous-silicon nitride
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:1 (1986),  10–13
4. On the Temperature Dependence of Activation Energy of Conduction for Non Crystalline Semiconductors
   
   Fizika i Tekhnika Poluprovodnikov, 19:1 (1985),  156–158
5. TRANSITION PROCESSES IN MNOP (METAL-SILICON NITRIDE SILICON OXIDE-SEMICONDUCTOR) STRUCTURES AND THEIR RELATION WITH THE INSTABILITY OF ELECTRIC CHARACTERISTICS OF DEVICES
   
   Zhurnal Tekhnicheskoi Fiziki, 53:6 (1983),  1089–1095
6. Optically controlled metal–insulator–semiconductor memory element
   
   Kvantovaya Elektronika, 8:12 (1981),  2707–2710
7. Detection of light with an MIS structure operating under avalanche multiplication conditions
   
   Kvantovaya Elektronika, 8:4 (1981),  785–792
8. Self-stabilized avalanche process in a metal-dielectric-semiconductor (MDS) structure. Avalanche MDS photodetectors
   
   UFN, 134:4 (1981),  748–750
9. Electronic processes in metal-silicon nitride-silicon dioxide-semiconductor (MNOS) structures
   
   UFN, 134:4 (1981),  747–748
10. Optoelectronic internal memory utilizing a metal–nitride–oxide–semiconductor structure and a laser electron-beam tube
    
    Kvantovaya Elektronika, 7:7 (1980),  1585–1588
11. A linear array of avalanche MIS photodetectors
    
    Kvantovaya Elektronika, 5:11 (1978),  2482–2484
12. Feasibility of construction of a pulsed avalanche photodetector based on an MIS structure with stable internal amplification
    
    Kvantovaya Elektronika, 5:9 (1978),  1918–1923
13. Possible use of metal-insulator-semiconductor structures with GaP–GaAs heterojunctions in optical data processing
    
    Kvantovaya Elektronika, 4:3 (1977),  678–681
14. Investigation of the resolution of EuO as a hologram recording material
    
    Kvantovaya Elektronika, 4:3 (1977),  669–672
15. Optically controlled memory element based on a metalnitride- oxide-semiconductor structure with a gallium arsenide substrate
    
    Kvantovaya Elektronika, 3:9 (1976),  2078–2080
16. Holographic storage of information in EuO films
    
    Kvantovaya Elektronika, 3:9 (1976),  2076–2078
17. Pulse avalanche photodetector based on a metal-insulator-semiconductor structure
    
    Kvantovaya Elektronika, 2:12 (1975),  2624–2626
18. Reading of optical information from a metal-insulator-semiconductor structure by an electron beam
    
    Kvantovaya Elektronika, 2:12 (1975),  2617–2620
19. Reversible recording of optical information in metal-dielectric-semiconductor structures
    
    Kvantovaya Elektronika, 2:9 (1975),  2013–2018
20. Photoelectric reading of information recorded in a MNOS structure
    
    Kvantovaya Elektronika, 2:3 (1975),  508–512
21. Investigation of the resolution of metal-nitride-oxide-semiconductor structures in recording and reading of optical information
    
    Kvantovaya Elektronika, 1:10 (1974),  2291–2293
22. Redistribution of the voltage in a metal-silicon nitride-silicon dioxide-silicon structure under the influence of laser radiation
    
    Kvantovaya Elektronika, 1:8 (1974),  1885–1888


23. Bentsion Moiseevich Vul (Obituary)
    
    UFN, 149:2 (1986),  349–350
24. Bentsion Moiseevich Vul (on his eightieth birthday)
    
    UFN, 140:1 (1983),  161–162
25. Nikolai Gennadievich Basov (on his 60th birthday)
    
    UFN, 138:4 (1982),  683–684