Syrbu A V

Publications in Math-Net.Ru

1. DYNAMICALLY SINGLE-FREQUENCY (ALGA)AS QUANTUM-DIMENSIONAL LASERS WITH LOW GENERATION THRESHOLD
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 17:24 (1991),  99–102
2. OVERGREW ALGAAS QUANTUM-DIMENSIONAL LASER-DIODES OBTAINED THROUGH THE COMBINATION OF MOSHYDRIDE AND LIQUID-PHASE EPITAXY
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 17:22 (1991),  100–103
3. BISTABLE OPTICAL ACCELERATOR BASED INGAASP-INP HETEROSTRUCTURES
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 17:11 (1991),  30–32
4. ALGAAS QUANTUM-DIMENSIONAL LASER-DIODES WITH GRADIENT WAVE-GUIDE OBTAINED THROUGH LOW-TEMPERATURE LIQUID-PHASE EPITAXY
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 17:4 (1991),  58–62
5. ELECTROPHYSICAL CHARACTERISTICS OF LOW-THRESHOLD (IN=1,3 MA, T=300-K) QUANTUM-DIMENSIONAL ALGAAS-LASER DIODE WITH OVERGROWN HETEROSTRUCTURE MANUFACTURED BY LOW-TEMPERATURE LIQUID-PHASE EPITAXY TECHNIQUE
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 17:3 (1991),  4–8
6. ALCAAS SINGLE-FREQUENCY QUANTUM-DIMENSIONAL LASER-DIODES WITH THRESHOLD CURRENT OF 1-MA GENERATION OBTAINED BY LPE METHOD
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:19 (1990),  32–35
7. RADIANT AND ELECTRIC CHARACTERISTICS OF SUPERMODE QUANTUM-DIMENSIONAL ALGAAS LASERS PREPARED BY THE LOW-TEMPERATURE LIQUID-PHASE EPITAXY METHOD
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:15 (1990),  60–64
8. VOLUME CHARACTERISTICS OF OVERGREW QUANTUM-DIMENSIONAL ALGAAS LASERS, PREPARED BY THE LOW-TEMPERATURE LIQUID-PHASE EPITAXY METHOD
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:15 (1990),  56–59
9. OPTICAL DIRECT AMPLIFIER BASED ON INGAAS HETEROSTRUCTURES
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:10 (1990),  83–86
10. SUPER LOW-THRESHOLD (IN =1,3MA,T=300-K) QUANTUM-DIMENSIONAL ALGAAS LASERS WITHOUT REFLECTING MIRROR COATINGS GROWN BY LPE
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:9 (1990),  41–44
11. LOW THRESHOLD (IN=3.0MA, T=300-K) QUANTUMDIMENSIONAL ALGAAS LASER-DIODES WITH OVERGROWN HETEROSTRUCTURE PREPARED BY THE LIQUID-PHASE EPITAXY TECHNIQUE
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:5 (1990),  66–71
12. EFFECT OF SUPERCOOLING OF SOLUTION-FUSION ON PARAMETERS OF INGAASP (LAMBDAG=1.3MU-M) LAYERS
    
    Zhurnal Tekhnicheskoi Fiziki, 59:5 (1989),  127–130
13. CHARACTERISTICS OF LIQUID-PHASE GROWTH OF ALXGA1-XAS WHERE (X=0.2-0.3) AT LOW-TEMPERATURE)
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 15:9 (1989),  50–54
14. SELECTIVE RECEPTION OF OPTICAL INFORMATION BY A LASER DIODE
    
    Zhurnal Tekhnicheskoi Fiziki, 57:3 (1987),  586–588
15. DIRECT REGISTRATION OF INTENSIFICATION LINE FORM IN INJECTION-LASERS
    
    Zhurnal Tekhnicheskoi Fiziki, 57:1 (1987),  168–170
16. Retuned superselective emission detector based on the $Al\,Ga\,As$ laser
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:13 (1986),  783–787
17. Investigation of photosensitive properties of an injection laser by the effective gain method
    
    Kvantovaya Elektronika, 13:9 (1986),  1785–1793
18. Light Absorption in Waveguides with Variband Layers of Solid Solution in (GaAl)As System
    
    Fizika i Tekhnika Poluprovodnikov, 18:3 (1984),  479–483