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Druzhinina L V

Publications in Math-Net.Ru

  1. Injection InGaSbAs laser emitting at 2.4μ (300K)

    Kvantovaya Elektronika, 13:10 (1986),  2119–2120
  2. Injection InGaSbAs lasers emitting radiation of wavelengths 1.9–2.3μ at room temperature

    Kvantovaya Elektronika, 12:6 (1985),  1309–1311
  3. Optical properties of $\mathrm{Ga}_{x}\mathrm{In}_{1-x}\mathrm{As}_{y}\mathrm{Sb}_{1-y}$

    Fizika Tverdogo Tela, 26:1 (1984),  145–150
  4. Properties of AIGaAsSb–GaSb heterojunction injection lasers in the 1.4–1.8 $\mu m$ wavelength range

    Kvantovaya Elektronika, 7:1 (1980),  91–96
  5. Injection heterolaser based on InGaAsSb four-component solid solution

    Kvantovaya Elektronika, 5:3 (1978),  703–704
  6. Efficient room-temperature stimulated emission from a Gaxln1–xAsySb1–y semiconductor laser in the spectral range 1.8–2.4 μ

    Kvantovaya Elektronika, 5:1 (1978),  126–128
  7. Spontaneous and stimulated emission from GaxIn1–xAs, GaAsxSb1–x, and GaxIn1–xAs1–yPy solid solutions

    Kvantovaya Elektronika, 3:11 (1976),  2490–2494
  8. Investigation of AlxGa1–xAs injection heterolasers emitting visible radiation

    Kvantovaya Elektronika, 3:5 (1976),  1080–1084
  9. Luminescence and stimulated emission from Gaxln1–xAsySb1–y

    Kvantovaya Elektronika, 3:4 (1976),  932–934
  10. New uncooled injection heterolaser emitting in the 1.5–1.8 μ range

    Kvantovaya Elektronika, 3:2 (1976),  465–466
  11. Heterojunction lasers made of GaxIn1–xAsyP1–y and AlxGa1–xSbyAs1–y solid solutions

    Kvantovaya Elektronika, 1:10 (1974),  2294–2295
  12. Parameters of electron-beam-pumped AlxGa1–xAs lasers in the visible part of the spectrum

    Kvantovaya Elektronika, 1:1 (1974),  178–180


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