Skripkin V A

Publications in Math-Net.Ru

1. Injection InGaSbAs laser emitting at 2.4μ (300K)
   
   Kvantovaya Elektronika, 13:10 (1986),  2119–2120
2. LOW-THRESHOLD INJECTION-LASERS BASED ON THICK GAINPAS/INP (1.2-1.6 MKM) HETEROSTRUCTURES
   
   Zhurnal Tekhnicheskoi Fiziki, 54:3 (1984),  551–557
3. Injection InGaAsP/lnP lasers with a threshold current density of 0.5 kA/cm² at 300 К
   
   Kvantovaya Elektronika, 11:4 (1984),  645–646
4. Three-layer waveguide InGaAsP/lnP injection lasers
   
   Kvantovaya Elektronika, 11:3 (1984),  631–633
5. Continuous-wave injection lasers emitting in the 1.5–1.6 μ range
   
   Kvantovaya Elektronika, 9:9 (1982),  1749
6. Properties of AIGaAsSb–GaSb heterojunction injection lasers in the 1.4–1.8 $\mu m$ wavelength range
   
   Kvantovaya Elektronika, 7:1 (1980),  91–96