Galchenkov D V

Publications in Math-Net.Ru

1. LASER LATTICE BASED ON THE MULTITRANSITION R-P-HETEROSTRUCTURE
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:23 (1988),  2140–2144
2. Determination of Potential-Barrier Height in Heterojunctions with Two-Dimensional Electron Gas
   
   Fizika i Tekhnika Poluprovodnikov, 21:8 (1987),  1522–1524
3. Laser ERTof 5-watt with differential efficiency of 14% at 300 K
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:11 (1987),  689–693
4. Two-Dimensional Electronic Gas with High Mobility in Specially Undoped GaAs$-$Al$_{x}$Ga$_{1-x}$As Heterostructures Grown by Liquid-Phase Epitaxy
   
   Fizika i Tekhnika Poluprovodnikov, 19:2 (1985),  333–336
5. Influence of deep impurity levels on the threshold characteristics of electronbeam-pumped lasers made of $n-Ga_{1-x}Al_xAs$
   
   Kvantovaya Elektronika, 11:4 (1984),  833–835
6. Изменение концентации носителей при перестройке зонной структуры в твердых растворах Al$_{x}$Ga$_{1-x}$As, легированных теллуром и оловом
   
   Fizika i Tekhnika Poluprovodnikov, 17:10 (1983),  1748–1751
7. Двумерный электронный газ и анизотропия явлений переноса в гетероструктуре GaAs$-$Al$_{s}$Ga$_{1-x}$As
   
   Fizika i Tekhnika Poluprovodnikov, 17:2 (1983),  288–293
8. Electron-beam control of the radiation emitted by injection light sources
   
   Kvantovaya Elektronika, 8:5 (1981),  1126–1128
9. Influence of doping of Ga_0.68Al_0.32As on its cathodoluminescence and threshold current density of a laser pumped by an electron beam
   
   Kvantovaya Elektronika, 8:1 (1981),  201–204
10. Multilayer $GaAs-AlAs$ heterostructure laser pumped transversely by an electron beam
    
    Kvantovaya Elektronika, 7:6 (1980),  1209–1212
11. Electron-beam-pumped semiconductor laser utilizing multilayer Ga_1–xln_xAs_1–ySb_y heterostructures
    
    Kvantovaya Elektronika, 3:1 (1976),  94–100