Shevchenko E G

Publications in Math-Net.Ru

1. LOW-THRESHOLD INJECTION-LASERS BASED ON THICK GAINPAS/INP (1.2-1.6 MKM) HETEROSTRUCTURES
   
   Zhurnal Tekhnicheskoi Fiziki, 54:3 (1984),  551–557
2. Injection InGaAsP/lnP lasers with a threshold current density of 0.5 kA/cm² at 300 К
   
   Kvantovaya Elektronika, 11:4 (1984),  645–646
3. Three-layer waveguide InGaAsP/lnP injection lasers
   
   Kvantovaya Elektronika, 11:3 (1984),  631–633
4. Temperature dependences of the emission characteristics of GaInPAs/InP injection lasers
   
   Kvantovaya Elektronika, 9:9 (1982),  1902–1904
5. Continuous-wave injection lasers emitting in the 1.5–1.6 μ range
   
   Kvantovaya Elektronika, 9:9 (1982),  1749
6. Mode composition of radiation from mesastripe GalnPAs–lnP heterojunction lasers buried in InP or GalnPAs
   
   Kvantovaya Elektronika, 8:9 (1981),  1994–1996
7. Buried mesastripe cw room-temperature $GaInPAs/InP$ heterojunction lasers in the $1,24-1,28\mu m$ wavelength range
   
   Kvantovaya Elektronika, 7:9 (1980),  1990–1992
8. High-efficiency GaInPAs/InP light-emitting diodes
   
   Kvantovaya Elektronika, 5:11 (1978),  2488–2489
9. Spontaneous and stimulated emission from Ga_xIn_1–xAs, GaAs_xSb_1–x, and Ga_xIn_1–xAs_1–yP_y solid solutions
   
   Kvantovaya Elektronika, 3:11 (1976),  2490–2494
10. Heterojunction lasers made of Ga_xIn_1–xAs_yP_1–y and Al_xGa_1–xSb_yAs_1–y solid solutions
    
    Kvantovaya Elektronika, 1:10 (1974),  2294–2295
11. Comparison of the instantaneous and averaged emission spectra of an injection laser operating under spiking conditions
    
    Kvantovaya Elektronika, 1971, no. 5,  93–95