Speciality: 01.04.10 (Physcics of semiconductors)
Birth date: 23.10.1956
E-mail:
Website: https://www.mathnet.ru/rus/person72069
Keywords: Semiconductors, nanostructures, quantum wells, interband tunnelling, resonant tunnelling, dissipative structures, kinetic effects.
UDC: 621.315.592, 53:51, 621.382, 621.373.826:681.787, 534.2-16, 621.37/39.534
MSC: 76M99, 78A55

Subject:

Semiconductor physics, solid state physics, heterostructures, dissipative structures, spin phenomena, quantum wells, InAs/GaSb band gap structures, tunneling and tunnel-resonant diodes, non-equilibrium and non-stationary phenomena, phase transitions, interband optical transitions, electron-phonon interaction, optical bistability, nonlinear waves in plasma and solids, Landau quantization, Landau attenuation, quasi-classical method, surface physics and microelectronic structures.

Main publications:

1. A. A. Zakharova, I. A. Semenikhin, K. A. Chao, “Optical Anisotropy of InAs/GaSb Broken-Gap Quantum Wells”, JETP, 114:5 (2012), 731-737
2. A. Zakharova, “Interband tunnelling in semiconductor heterostructures”, Semicond. Sci. Technol., 13:6 (1998), 569–575
3. A. Zakharova, S. T. Yen, K. A. Chao, “Hybridization of electron, light-hole, and heavy-hole states in InAs/GaSb quantum wells”, Phys. Rev. B, 64:23 (2001), 235332
4. A. A. Zakharova, “Interband resonant tunneling in superconductor heterostructures in a quantizing magnetic field”, Physics of the Solid State, 40:11 (1998), 1923-1928
5. A. Zakharova, I. Semenikhin, K. A. Chao, “Spin-Related Phenomena in InAs/GaSb Quantum Wells”, JETP Letters, 94:8 (2011), 660–664

Recent publications

Personal pages:

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Organisations:

• Lukin State Research Institute of Physical Problems
• Kotelnikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences
• Moscow Institute of Physics and Technology (National Research University), Dolgoprudny, Moscow region
• Valiev Institute of Physics and Technology of the Russian Academy of Sciences