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Gorelenok A T

Publications in Math-Net.Ru

  1. Диоды Ганна на основе гетероструктуры $n$-InGaAs$/n^{+}$-InP

    Fizika i Tekhnika Poluprovodnikov, 26:4 (1992),  611–613
  2. ZN DIFFUSION IN INP AND ZN-BASED SOLID-SOLUTIONS FROM POLYMER FILM DIFFUSANTS

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 18:13 (1992),  35–38
  3. In$_{0.53}$Ga$_{0.47}$As/In$_{0.88}$Ga$_{0.12}$As$_{0.23}$P$_{0.77}$-гетероструктуры с двумерным электронным газом

    Fizika i Tekhnika Poluprovodnikov, 25:5 (1991),  908–912
  4. DIAGNOSTICS OF INGAASP/INP HETEROBOUNDARIES BY AUGER SHAPES OF SLANT SECTIONS OBTAINED THROUGH CHEMICAL ETCHING

    Zhurnal Tekhnicheskoi Fiziki, 60:10 (1990),  177–180
  5. Исследование влияния химической обработки InP на скорость поверхностной рекомбинации методом комбинационного рассеяния света

    Fizika i Tekhnika Poluprovodnikov, 24:12 (1990),  2177–2180
  6. Исследование кинетики фотопроводимости в коротких фоторезисторах на основе InP : Fe

    Fizika i Tekhnika Poluprovodnikov, 24:12 (1990),  2167–2171
  7. Измерение ВАХ InGaAs при помощи пикосекундной электрооптической стробирующей установки

    Fizika i Tekhnika Poluprovodnikov, 24:5 (1990),  848–854
  8. 2-DIMENSIONAL ELECTRON-GAS IN IN0.88GA0.12AS0.23P0.77/IN0.53GA0.47AS HETEROSTRUCTURES GROWN BY LIQUID-PHASE EPITAXY

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:8 (1990),  47–50
  9. Край оптического поглощения и деформации эпитаксиальных слоев In$_{0.53}$Ga$_{0.47}$As

    Fizika i Tekhnika Poluprovodnikov, 23:2 (1989),  201–206
  10. Концентрация и подвижность электронов в InP и In$_{0.53}$Ga$_{0.47}$As, легированных редкоземельными элементами

    Fizika i Tekhnika Poluprovodnikov, 22:1 (1988),  35–43
  11. SCHOTTKY BARRIERS AND INGAAS/INP-BASED FIELD TRANSISTORS

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:19 (1988),  1807–1810
  12. Pbotoluminescent Studies of Carrier Trapping into the Quantum Well of InGaAsP/InP Double Heterostructure

    Fizika i Tekhnika Poluprovodnikov, 21:11 (1987),  1983–1988
  13. Study of Minority-Carrier Lifetime in the Narrow-Band Region of Diode InGaAsP/InP Structures

    Fizika i Tekhnika Poluprovodnikov, 21:8 (1987),  1498–1501
  14. Magnetoresistive E. M. F. of Quasi-Two-Dimensional Electron Gas in In$_{0.53}$Ga$_{0.47}$As/InP Heterostructures

    Fizika i Tekhnika Poluprovodnikov, 21:8 (1987),  1479–1481
  15. Removal of a Nonequilibrium Plasma from Short InP : Fe Photoresistors by an Electric Field

    Fizika i Tekhnika Poluprovodnikov, 21:1 (1987),  70–74
  16. Determination of AFC of fast-response photodetectors using the homodyne glass-fiber diagram of optical signal amplitude pulses

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:17 (1987),  1059–1062
  17. Delay and Suppression of Current Filament by a Magnetic Field in Quasi-Two-Dimensional In$_{0.53}$Ga$_{0.47}$Аs/InР Heterostructures

    Fizika i Tekhnika Poluprovodnikov, 20:8 (1986),  1488–1491
  18. Spin Splitting of the Conduction Band in InP

    Fizika i Tekhnika Poluprovodnikov, 20:2 (1986),  347–350
  19. MESA-STRIPE INGAASP/INP(LAMBDA=1.5MKM) LASERS OF CONTINUOUS ACTION

    Zhurnal Tekhnicheskoi Fiziki, 55:9 (1985),  1872–1876
  20. INVESTIGATION OF PIN-PHOTODIODES BASED ON INGAASP/INP

    Zhurnal Tekhnicheskoi Fiziki, 55:8 (1985),  1566–1569
  21. Study of SHF Absorption in InGaAs InP Heterostructures in the Mode of Electric Instability

    Fizika i Tekhnika Poluprovodnikov, 19:11 (1985),  2004–2007
  22. Study of Intrinsic Photoconduction in InP and InGaAs Epitaxial Layers

    Fizika i Tekhnika Poluprovodnikov, 19:8 (1985),  1460–1463
  23. Submillimeter Photoconduction of Epitaxial InP Doped by Rare-Earth Elements

    Fizika i Tekhnika Poluprovodnikov, 19:8 (1985),  1394–1398
  24. Study of Leakage Currents of Planar $p{-}n$ Junctions in InP and of $p{-}i{-}n$ Structures Based on InGaAs/InP

    Fizika i Tekhnika Poluprovodnikov, 19:4 (1985),  668–673
  25. Observation of small-sized donor photoexcitation spectra and the free-electron cyclotron-resonance in $In\,P$, alloyed $Cd$ and $Yb$

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:6 (1985),  347–351
  26. INFLUENCE OF TECHNOLOGICAL FACTORS ON LUMINESCENT CHARACTERISTICS OF INGAASP/INP(LAMBDA=1.55MKM) HETEROLASERS

    Zhurnal Tekhnicheskoi Fiziki, 54:10 (1984),  2047–2050
  27. Обратные токи в $p{-}n$-гетероструктурах InGaAsP/InP

    Fizika i Tekhnika Poluprovodnikov, 18:11 (1984),  2036–2040
  28. Спин-орбитальное рассеяние и слабая локализация электронов в гетероструктурах InGaAs/InP

    Fizika i Tekhnika Poluprovodnikov, 18:11 (1984),  1999–2005
  29. Влияние несоответствия параметров решеток на $I{-}V$-характеристики InGaAsP/InP $p{-}n$-гетероструктур

    Fizika i Tekhnika Poluprovodnikov, 18:8 (1984),  1413–1416
  30. Особенности развития токовых шнуров в полупроводниках

    Fizika i Tekhnika Poluprovodnikov, 18:8 (1984),  1383–1385
  31. Special Features of SHF-Noise in the Development of Electric Instability in Quasi-Two-Dimensional In$_{0.53}$Ga$_{0.47}$As/InP Heterostructures

    Fizika i Tekhnika Poluprovodnikov, 18:7 (1984),  1237–1241
  32. Two-Dimensional Elactron Gas in InGaAs/InP Heterostructures Produced by Liquid-Phase Epitaxy

    Fizika i Tekhnika Poluprovodnikov, 18:7 (1984),  1230–1232
  33. Tunnel-Type Currents in InGaAsP/InP $p{-}n$ Heterostructures

    Fizika i Tekhnika Poluprovodnikov, 18:6 (1984),  1034–1038
  34. Effect of Rare-Earth Elements on Carrier Mobility in InP and InGaAs Epitaxial Layers

    Fizika i Tekhnika Poluprovodnikov, 18:1 (1984),  83–85
  35. PHOTO-TRANSISTOR BASED ON N-P-N HETEROSTRUCTURES IN THE INP-INGAASP SYSTEM

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 10:21 (1984),  1294–1297
  36. LOW-THRESHOLD MEZOBAND INGAASP/INP CONTINUOUS OPERATION LASERS

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 10:16 (1984),  961–964
  37. BAND LASERS BASED ON DHS (DOUBLE HETEROSTRUCTURE) IN THE INGAASP-INP SYSTEM, PRODUCED BY OXYGEN-ATOMS IMPLANTATION

    Zhurnal Tekhnicheskoi Fiziki, 53:10 (1983),  1973–1978
  38. LOW-THRESHOLD BAND THICK HETEROLASERS BASED ON INGAASP/INP(GAMMA-CONGRUENT-TO-1,3 MKM), OBTAINED BY HYBRID TECHNOLOGY

    Zhurnal Tekhnicheskoi Fiziki, 53:7 (1983),  1413–1414
  39. FACE SPONTANEOUS EMITTERS BASED ON DHS (DOUBLE HETEROSTRUCTURES) INGAASP(GAMMA-CONGRUENT-TO-1,3MKM) WITH ETA-B-CONGRUENT-TO-6-PERCENT AT 300K

    Zhurnal Tekhnicheskoi Fiziki, 53:7 (1983),  1408–1411
  40. Эффекты легирования редкоземельными элементами в низкотемпературной краевой люминесценции InP

    Fizika i Tekhnika Poluprovodnikov, 17:12 (1983),  2148–2151
  41. Сравнение краев поглощения в бинарных и многокомпонентных прямозонных соединениях A$^{\text{III}}$B$^{\text{V}}$ на основе системы InGaAsP

    Fizika i Tekhnika Poluprovodnikov, 17:8 (1983),  1402–1405
  42. Особенности поляризации люминесценции и константы деформационного потенциала в InP $n$- и $p$-типа проводимости

    Fizika i Tekhnika Poluprovodnikov, 17:6 (1983),  997–1002
  43. Высокоэффективный фотодетектор для ультрафиолетового излучения

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 9:24 (1983),  1516–1519
  44. Multichannel duplex fiber-optic communication line operating at the wavelength of ~1.3 μ

    Kvantovaya Elektronika, 9:8 (1982),  1698–1700
  45. Prototype fiber-optical communication line with spectral multiplexing in the 1.3μ region

    Kvantovaya Elektronika, 6:11 (1979),  2487–2490
  46. Fiber-optical long-distance telecommunication line operating at the wavelength of 1.3 μ

    Kvantovaya Elektronika, 5:11 (1978),  2486–2488

© Steklov Math. Inst. of RAS, 2024