Kryzhanovskaya Natal'ya Vladimirovna

Publications in Math-Net.Ru

1. High-speed vertically emitting lasers in the spectral range of 1550 nm, implemented in the framework of wafer sintering method
   
   Kvantovaya Elektronika, 52:10 (2022),  878–884
2. Ultrahigh modal gain in stripe injection lasers and microlasers based on InGaAs/GaAs quantum dots
   
   Kvantovaya Elektronika, 52:7 (2022),  593–596
3. Optical properties of three-dimensional InGaP(As) islands formed by substitution of fifth-group elements
   
   Optics and Spectroscopy, 129:2 (2021),  218–222
4. Increase in the efficiency of a tandem of semiconductor laser – optical amplifier based on self-organizing quantum dots
   
   Fizika i Tekhnika Poluprovodnikov, 55:12 (2021),  1223–1228
5. Saturation power of a semiconductor optical amplifier based on self-organized quantum dots
   
   Fizika i Tekhnika Poluprovodnikov, 55:9 (2021),  820–825
6. Impact of substrate in calculating the electrical resistance of microdisk lasers
   
   Fizika i Tekhnika Poluprovodnikov, 55:2 (2021),  195–200
7. MBE growth of InGaN nanowires on SiC/Si(111) and Si(111) substrates
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:21 (2021),  32–35
8. Increasing the optical power of InGaAs/GaAs microdisk lasers transferred to a silicon substrate by thermal compression
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:20 (2021),  3–6
9. An investigation of the sensitivity of a microdisk laser to a change in the refractive index of the environment
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:19 (2021),  30–33
10. Energy consumption at high-frequency modulation of an uncooled InGaAs/GaAs/AlGaAs microdisk laser
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:13 (2021),  28–31
11. Synthesis of morphologically developed ingan nanostructures on silicon: influence of the substrate temperature on the morphological and optical properties
    
    Fizika i Tekhnika Poluprovodnikov, 54:9 (2020),  884–887
12. A study of the photoresponse in graphene produced by chemical vapor deposition
    
    Fizika i Tekhnika Poluprovodnikov, 54:9 (2020),  833–840
13. Ultimate lasing temperature of microdisk lasers
    
    Fizika i Tekhnika Poluprovodnikov, 54:6 (2020),  570–574
14. MBE-grown In$_x$ Ga$_{1-x}$ As nanowires with 50% composition
    
    Fizika i Tekhnika Poluprovodnikov, 54:6 (2020),  542
15. Comparative analysis of injection microdisk lasers based on InGaAsN quantum wells and InAs/InGaAs quantum dots
    
    Fizika i Tekhnika Poluprovodnikov, 54:2 (2020),  212–216
16. Lasing of injection microdisks with InAs/InGaAs/GaAs quantum dots transferred to silicon
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:16 (2020),  3–6
17. A micro optocoupler based on a microdisk laser and a photodetector with an active region based on quantum well-dots
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:13 (2020),  7–10
18. The effect of self-heating on the modulation characteristics of a microdisk laser
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:11 (2020),  3–7
19. Evaluation of the impact of surface recombination in microdisk lasers by means of high-frequency modulation
    
    Fizika i Tekhnika Poluprovodnikov, 53:8 (2019),  1122–1127
20. Silicon nanopillar microarrays: formation and resonance reflection of light
    
    Fizika i Tekhnika Poluprovodnikov, 53:2 (2019),  216–220
21. The use of microdisk lasers based on InAs/InGaAs quantum dots in biodetection
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:23 (2019),  10–13
22. Synthesis by molecular beam epitaxy and properties of InGaN nanostructures of branched morphology on a silicon substrate
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:21 (2019),  48–50
23. Specific features of the current–voltage characteristic of microdisk lasers based on InGaAs/GaAs quantum well-dots
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:19 (2019),  37–39
24. Energy consumption for high-frequency switching of a quantum-dot microdisk laser
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:16 (2019),  49–51
25. Reflection spectra of microarrays of silicon nanopillars
    
    Optics and Spectroscopy, 124:5 (2018),  695–699
26. Violation of local electroneutrality in the quantum well of a semiconductor laser with asymmetric barrier layers
    
    Fizika i Tekhnika Poluprovodnikov, 52:12 (2018),  1518–1526
27. Phosphorus-based nanowires grown by molecular-beam epitaxy on silicon
    
    Fizika i Tekhnika Poluprovodnikov, 52:11 (2018),  1304–1307
28. Coherent growth of InP/InAsP/InP nanowires on a Si (111) surface by molecular-beam epitaxy
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:3 (2018),  55–61
29. On the high characteristic temperature of an InAs/GaAs/InGaAsP QD laser with an emission wavelength of $\sim$1.5 $\mu$m on an InP substrate
    
    Fizika i Tekhnika Poluprovodnikov, 51:10 (2017),  1382–1386
30. Optical properties of metamorphic hybrid heterostuctures for vertical-cavity surface-emitting lasers operating in the 1300-nm spectral range
    
    Fizika i Tekhnika Poluprovodnikov, 51:9 (2017),  1176–1181
31. Study of the structural and optical properties of GaP(N) layers synthesized by molecular-beam epitaxy on Si(100) 4$^\circ$ substrates
    
    Fizika i Tekhnika Poluprovodnikov, 51:2 (2017),  276–280
32. Specific features of waveguide recombination in laser structures with asymmetric barrier layers
    
    Fizika i Tekhnika Poluprovodnikov, 51:2 (2017),  263–268
33. Laser characteristics of an injection microdisk with quantum dots and its free-space outcoupling efficiency
    
    Fizika i Tekhnika Poluprovodnikov, 50:10 (2016),  1425–1428
34. Theory of the power characteristics of quantum-well lasers with asymmetric barrier layers: Inclusion of asymmetry in electron- and hole-state filling
    
    Fizika i Tekhnika Poluprovodnikov, 50:10 (2016),  1380–1386
35. Multilayer heterostructures for quantum-cascade lasers operating in the terahertz frequency range
    
    Fizika i Tekhnika Poluprovodnikov, 50:5 (2016),  674–678
36. Microdisk injection lasers for the 1.27-$\mu$m spectral range
    
    Fizika i Tekhnika Poluprovodnikov, 50:3 (2016),  393–397
37. Laser generation at 1.3 $\mu$m in vertical microcavities containing InAs/InGaAs quantum dot arrays under optical pumping
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:19 (2016),  70–79
38. Whispering-gallery mode microcavity quantum-dot lasers
    
    Kvantovaya Elektronika, 44:3 (2014),  189–200