Baranov Aleksey Nikolaevich

Publications in Math-Net.Ru

1. Collective modes in coupled semiconductor disk lasers in the case of whispering-gallery modes
   
   Fizika i Tekhnika Poluprovodnikov, 51:9 (2017),  1273–1277
2. InAsSb/InAsSbP injection lasers for high-resolution spectroscopy
   
   Kvantovaya Elektronika, 20:9 (1993),  839–842
3. Природа длинноволнового сдвига спектра когерентного излучения в гетеролазерах на основе GaInAsSb
   
   Fizika i Tekhnika Poluprovodnikov, 26:11 (1992),  1971–1976
4. Исследование температурной зависимости пороговой плотности тока ДГС лазеров на основе GaInAsSb
   
   Fizika i Tekhnika Poluprovodnikov, 25:3 (1991),  394–401
5. Оптическое отражение и определение характеристик эпитаксиальных структур InAs$_{1-x-y}$Sb$_{x}$P$_{y}$/InAs
   
   Fizika i Tekhnika Poluprovodnikov, 25:1 (1991),  99–101
6. FIELD DISTRIBUTION EFFECT ON SURFACE BREAKDOWN PRESSURE OF COAXIAL SYSTEM INSULATORS IN CONDUCTING MEDIA
   
   Zhurnal Tekhnicheskoi Fiziki, 60:9 (1990),  167–169
7. Природа спонтанной электролюминесценции в гетеросветодиодах на основе GaInAsSb для спектрального диапазона $1.8{-}2.4$ мкм
   
   Fizika i Tekhnika Poluprovodnikov, 24:10 (1990),  1708–1714
8. Кластерные образования в эпитаксиальных слоях твердых растворов $p$-GaInSbAs, выращенных на подложках $n$-GaSb : Te
   
   Fizika i Tekhnika Poluprovodnikov, 24:6 (1990),  1072–1078
9. Misfit stress relaxation in $\mathrm{In}_{1-x}\mathrm{Ga}_{x}\mathrm{As}_{1-y}\mathrm{Sb}_{y}/\mathrm{GaSb}(x\sim 0.1,y\sim 0.2)$ heterostructures
   
   Fizika Tverdogo Tela, 31:8 (1989),  158–163
10. Спонтанная электролюминесценция в гетеропереходах II типа на основе GaInAsSb/GaSb (${\lambda=2.5}$ мкм, ${T=300}$ K)
    
    Fizika i Tekhnika Poluprovodnikov, 23:8 (1989),  1373–1377
11. Кинетика изменения концентрации структурных дефектов и их роль в рассеянии дырок в $p$-GaSb
    
    Fizika i Tekhnika Poluprovodnikov, 23:5 (1989),  780–786
12. COHERENT EMISSION-SPECTRA OF GAINASSB BAND LASERS
    
    Zhurnal Tekhnicheskoi Fiziki, 58:8 (1988),  1623–1626
13. DEFECT FORMATION IN GAALSB/GASB STRUCTURES FOR PHOTODIODES
    
    Zhurnal Tekhnicheskoi Fiziki, 57:2 (1987),  316–321
14. Change of concentration of natural acceptors in $Ga\,Sb$
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:18 (1987),  1103–1108
15. Effect of a resonator length on electroluminescent characteristics of $Ga\,In\,As\,Sb$-based lasers
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:9 (1987),  517–523
16. Avalanche multiplication in photodiode structures, based on $Ga\,In\,As\,Sb$ solid-solutions
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:8 (1987),  481–485
17. Manifestation of self-correlated quantum-dimensional potential holes in electroluminescent properties of $Ga\,In\,As\,Sb$ based lasers
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:8 (1987),  459–464
18. Generation of Coherent Radiation in Quantum-Dimensional Structure on the Single Heterojunction
    
    Fizika i Tekhnika Poluprovodnikov, 20:12 (1986),  2217–2221
19. Photodiodes based on $Ga\,In\,As\,Sb/Ga\,Al\,As\,Sb$ solid-solutions
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:21 (1986),  1311–1315
20. Quantum-dimensional laser with single heterojunction
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:11 (1986),  664–668
21. Injection ($Ga\,Al\,As\,Sb/Ga\,Sb/Ga\,In\,As\,Sb$) heterolaser with $2^x$-channel wave-guide-(DHS 2KV $\lambda=2$-mu-m), operating at room-temperature
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:9 (1986),  557–561
22. Dark Currents in GaAlSb(As) Diode Structures of «Resonant» Composition
    
    Fizika i Tekhnika Poluprovodnikov, 19:9 (1985),  1605–1611
23. STUDY OF THE CAPILLARY EFFECT IN THE GA-AL-AS/GAAS SYSTEM
    
    Zhurnal Tekhnicheskoi Fiziki, 53:11 (1983),  2224–2226