|
|
Publications in Math-Net.Ru
-
Collective modes in coupled semiconductor disk lasers in the case of whispering-gallery modes
Fizika i Tekhnika Poluprovodnikov, 51:9 (2017), 1273–1277
-
Photovoltage and photocurrent in Pd–oxide–InP structures in a hydrogen medium
Fizika i Tekhnika Poluprovodnikov, 50:7 (2016), 946–951
-
InAsSb/InAsSbP injection lasers for high-resolution spectroscopy
Kvantovaya Elektronika, 20:9 (1993), 839–842
-
Природа длинноволнового сдвига спектра когерентного излучения
в гетеролазерах на основе GaInAsSb
Fizika i Tekhnika Poluprovodnikov, 26:11 (1992), 1971–1976
-
LENGTH-WAVE LASERS BASED ON INASSB-INASSBP FOR METHANE SPECTROSCOPY
WHERE (LAMBDA=3.2-3.4 MU-M)
Pisma v Zhurnal Tekhnicheskoi Fiziki, 18:22 (1992), 6–10
-
GENERATION OF COHERENT EMISSION ON P-P-BOUNDARY IN DHS GAINASSB LASERS
Pisma v Zhurnal Tekhnicheskoi Fiziki, 18:17 (1992), 18–24
-
Исследование температурной зависимости пороговой плотности тока ДГС
лазеров на основе GaInAsSb
Fizika i Tekhnika Poluprovodnikov, 25:3 (1991), 394–401
-
EFFECT OF INTERFERENCE RECOMBINATION ON THRESHOLD CHARACTERISTICS OF
GAINASSB/GASB LASERS
Pisma v Zhurnal Tekhnicheskoi Fiziki, 17:17 (1991), 54–59
-
EMISSION STABILIZATION UNDER THE GROWN INGAASSB-GASB HETEROLASE
(LAMBDA=2-MU-M) OPERATION
Pisma v Zhurnal Tekhnicheskoi Fiziki, 17:6 (1991), 56–60
-
Природа спонтанной электролюминесценции в гетеросветодиодах на основе
GaInAsSb для спектрального диапазона $1.8{-}2.4$ мкм
Fizika i Tekhnika Poluprovodnikov, 24:10 (1990), 1708–1714
-
LONG-WAVE LIGHT DIODES BASED ON GAINASSB IN THE VICINITY OF IMMSCIBILITY
DOMAIN WHERE LAMBDA=2,4-2,6 MU-M, T=300-K)
Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:24 (1990), 19–24
-
LONG-WAVE LIGHT DIODES BASED ON INAS1-X-YSBXPY/INAS HETEROTRANSITIONS
(WHERE LAMBDA=3.0-4 MU-M AT 300-K) WITH WIDE-BAND WINDOW
Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:16 (1990), 42–47
-
CALCULATION OF THE WIDTH OF EMISSION-LINE OF LONG-WAVE GAINASSB
INJECTION-LASERS
Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:14 (1990), 66–70
-
Спонтанная электролюминесценция в гетеропереходах II типа
на основе GaInAsSb/GaSb (${\lambda=2.5}$ мкм, ${T=300}$ K)
Fizika i Tekhnika Poluprovodnikov, 23:8 (1989), 1373–1377
-
HIGH-PERFORMANCE PHOTODIODES BASED ON GAINASSB FOR SPECTRAL RANGE OF
1.8-2.4 MU-M (T=300-K)
Pisma v Zhurnal Tekhnicheskoi Fiziki, 15:18 (1989), 71–75
-
RELAXATION OF EMISSION AND NON-EQUILIBRIUM POPULATION IN
QUANTUM-DIMENSIONAL SEMICONDUCTING LASERS
Pisma v Zhurnal Tekhnicheskoi Fiziki, 15:3 (1989), 79–83
-
COHERENT EMISSION-SPECTRA OF GAINASSB BAND LASERS
Zhurnal Tekhnicheskoi Fiziki, 58:8 (1988), 1623–1626
-
LONG-WAVE LASERS BASED ON GAINASSB SOLID-SOLUTIONS NEAR THE
IMMISCIBILITY BOUNDARY(LAMBDA-APPROXIMATELY-2.5 MU-M, T=300-K)
Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:20 (1988), 1839–1843
-
EMISSION GENERATION IN THE CHANNELED OVERGROWN LASER BASED ON
GAINASSB/GASB IN CONTINUOUS REGIME (T=20-DEGREES-C, LAMBDA=2.0-MU-M)
Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:18 (1988), 1671–1675
-
HIGH-EFFICIENT PHOTODIODES BASED ON GAINASSB (WHERE LAMBDA=2.2 MU-M,
ZETA=4-PERCENT, T=300-K)
Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:9 (1988), 845–849
-
Effect of a resonator length on electroluminescent characteristics of $Ga\,In\,As\,Sb$-based lasers
Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:9 (1987), 517–523
-
Manifestation of self-correlated quantum-dimensional potential holes in electroluminescent properties of $Ga\,In\,As\,Sb$ based lasers
Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:8 (1987), 459–464
-
Polarization of emission in quantum dimensional on one heterotransition
Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:6 (1987), 332–337
-
Generation of Coherent Radiation in Quantum-Dimensional Structure on the Single Heterojunction
Fizika i Tekhnika Poluprovodnikov, 20:12 (1986), 2217–2221
-
Expansion of spectral photosensitivity in variable R-P-structures by the over-emission effect
Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:20 (1986), 1241–1245
-
Quantum-dimensional laser with single heterojunction
Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:11 (1986), 664–668
-
Injection ($Ga\,Al\,As\,Sb/Ga\,Sb/Ga\,In\,As\,Sb$) heterolaser with $2^x$-channel wave-guide-(DHS 2KV $\lambda=2$-mu-m), operating at room-temperature
Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:9 (1986), 557–561
-
Coordinate Dependence of the Difference between the Coefficients of Collision Ionization of Holes and Electrons in a Variband $p{-}n$ Structure
Fizika i Tekhnika Poluprovodnikov, 19:3 (1985), 502–506
-
Квантовая эффективность пластически и упруго деформированных
варизонных Ga$_{1-x}$Al$_{x}$P $p{-}n$-структур
Fizika i Tekhnika Poluprovodnikov, 17:12 (1983), 2173–2176
-
Спектральная зависимость коэффициента лавинного умножения
в варизонной $p{-}n$-структуре
Fizika i Tekhnika Poluprovodnikov, 17:4 (1983), 753–755
-
Спектры фоточувствительности варизонных Ga$_{1-x}$Al$_{x}$P
$p{-}n$-структур
Fizika i Tekhnika Poluprovodnikov, 17:1 (1983), 125–128
-
Electrical properties and photoconductivity of $\mathrm{ZnSiAs}_2$ crystals of $n$-type
Dokl. Akad. Nauk SSSR, 216:1 (1974), 56–58
-
Optical and photoelectric properties of single $\mathrm{ZnSiP}_2$ crystals
Dokl. Akad. Nauk SSSR, 163:3 (1965), 606–608
© , 2024