|
|
Publications in Math-Net.Ru
-
Photovoltage and photocurrent in Pd–oxide–InP structures in a hydrogen medium
Fizika i Tekhnika Poluprovodnikov, 50:7 (2016), 946–951
-
Photoelectric properties of photodiodes based on InAs/InAsSbP heterostructures with photosensitive-area diameters of 0.1–2.0 mm
Fizika i Tekhnika Poluprovodnikov, 49:12 (2015), 1720–1726
-
Light emitting diode–photodiode optoelectronic pairs based on the InAs/InAsSb/InAsSbP heterostructure for the detection of carbon dioxide
Fizika i Tekhnika Poluprovodnikov, 49:7 (2015), 1003–1006
-
Electrical properties of Pd-oxide-InP structures
Fizika i Tekhnika Poluprovodnikov, 49:3 (2015), 376–378
-
Mode synchronization in a laser with coupled disk cavities
Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:16 (2015), 77–83
-
High-power LEDs based on InGaAsP/InP heterostructures
Fizika i Tekhnika Poluprovodnikov, 48:12 (2014), 1693–1696
-
Electroluminescence properties of a whispering-gallery-mode laser with coupled disk cavities
Fizika i Tekhnika Poluprovodnikov, 48:10 (2014), 1434–1438
-
Temperature dependence of the threshold current in quantum-well WGM lasers (2.0–2.5 $\mu$m)
Fizika i Tekhnika Poluprovodnikov, 47:6 (2013), 821–824
-
Improvement in the quantum sensitivity of InAs/InAsSb/InAsSbP heterostructure photodiodes
Fizika i Tekhnika Poluprovodnikov, 47:5 (2013), 690–695
-
InAsSb/InAsSbP injection lasers for high-resolution spectroscopy
Kvantovaya Elektronika, 20:9 (1993), 839–842
-
Study of structure defects in indium-arsenide epitaxial layers
Fizika i Tekhnika Poluprovodnikov, 26:9 (1992), 1612–1624
-
Misfit stress relaxation in $\mathrm{In}_{1-x}\mathrm{Ga}_{x}\mathrm{As}_{1-y}\mathrm{Sb}_{y}/\mathrm{GaSb}(x\sim 0.1,y\sim 0.2)$ heterostructures
Fizika Tverdogo Tela, 31:8 (1989), 158–163
-
Change of concentration of natural acceptors in $Ga\,Sb$
Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:18 (1987), 1103–1108
© , 2025