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Shaleev Mikhail Vladimirovich

Publications in Math-Net.Ru

  1. Radiative properties of structures with two-dimensional photonic crystals with an unprocessed central region

    Fizika i Tekhnika Poluprovodnikov, 60:2 (2026),  65–72
  2. Формирование высококачественных релаксированных SiGe-слоев с большой долей Ge методом молекулярно-пучковой эпитаксии

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 52:17 (2026),  20–23
  3. Fabrication of dielectric resonators on the light-emitting GeSi heterostructures

    Zhurnal Tekhnicheskoi Fiziki, 95:1 (2025),  128–135
  4. Approach for obtaining Ge/Si(001) self-assembled hut wires for hole spin qubits

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:22 (2025),  17–20
  5. Isotopically purified Si/SiGe epitaxial structures for quantum computing

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:10 (2024),  22–25
  6. Effect of optical excitation conditions on the spectral and temporal characteristics of the radiation from two-dimensional photonic crystals with Ge(Si) nanoislands

    Fizika i Tekhnika Poluprovodnikov, 57:4 (2023),  251–258
  7. Planar (lateral) light-emitting diodes with Ge(Si) nanoislands embedded in a photonic crystal

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:22 (2023),  12–15
  8. Luminescent response of photonic crystals with embedded Ge nanoislands with different hole etching depths

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:10 (2023),  29–32
  9. Features of the structural and optical properties of InGaN layers obtained by the MBE PA method with a pulsed supply of metal flows

    Fizika i Tekhnika Poluprovodnikov, 55:9 (2021),  766–772
  10. Kinetics of the luminescence response of self-assembled Ge(Si) nanoislands embedded in two-dimensional photonic crystals

    Fizika i Tekhnika Poluprovodnikov, 54:10 (2020),  1150–1157
  11. Luminescence of spatially ordered self-assembled solitary Ge(Si) nanoislands and their groups incorporated into photonic crystals

    Fizika i Tekhnika Poluprovodnikov, 54:8 (2020),  708–715
  12. Visible emission from a dense biexciton gas in SiGe/Si quantum wells under external anisotropic strain

    Pis'ma v Zh. Èksper. Teoret. Fiz., 107:6 (2018),  371–377
  13. On the application of strain-compensating GaAsP layers for the growth of InGaAs/GaAs quantum-well laser heterostructures emitting at wavelengths above 1100 nm on artificial Ge/Si substrates

    Fizika i Tekhnika Poluprovodnikov, 52:12 (2018),  1443–1446
  14. Selective etching of Si, SiGe, Ge and its usage for increasing the efficiency of silicon solar cells

    Fizika i Tekhnika Poluprovodnikov, 51:12 (2017),  1599–1604
  15. Peculiarities of growing InGaAs/GaAs/AlGaAs laser structures by MOCVD on Ge/Si substrates

    Fizika i Tekhnika Poluprovodnikov, 51:11 (2017),  1579–1582
  16. Plasmonic enhancement of four-particle radiative recombination in SiGe quantum wells

    Pis'ma v Zh. Èksper. Teoret. Fiz., 104:4 (2016),  229–234
  17. Fine structure of the emission spectrum of a two-dimensional electron-hole liquid in SiGe/Si quantum wells

    Pis'ma v Zh. Èksper. Teoret. Fiz., 104:3 (2016),  161–166
  18. Electroluminescence of structures with self-assembled Ge(Si) nanoislands confined between strained Si layers

    Fizika i Tekhnika Poluprovodnikov, 50:12 (2016),  1685–1689
  19. Influence of surface roughness on a change in the growth mode from two-dimensional to three-dimensional for strained SiGe heterostructures

    Fizika i Tekhnika Poluprovodnikov, 50:12 (2016),  1657–1661
  20. On the radiative recombination and tunneling of charge carriers in SiGe/Si heterostructures with double quantum wells

    Fizika i Tekhnika Poluprovodnikov, 50:12 (2016),  1629–1633
  21. Epitaxial GaN layers formed on langasite substrates by the plasma-assisted MBE method

    Fizika i Tekhnika Poluprovodnikov, 50:11 (2016),  1532–1536
  22. Electroluminescence from MIS silicon-based light emitters with arrays of self-assembled Ge(Si) nanoislands

    Fizika i Tekhnika Poluprovodnikov, 50:11 (2016),  1497–1500
  23. Impact of growth and annealing conditions on the parameters of Ge/Si(001) relaxed layers grown by molecular beam epitaxy

    Fizika i Tekhnika Poluprovodnikov, 49:11 (2015),  1463–1468
  24. Excitation spectra of photoluminescence and its kinetics in structures with self-assembled Ge:Si nanoislands

    Fizika i Tekhnika Poluprovodnikov, 49:11 (2015),  1458–1462
  25. Growth of light-emitting SiGe heterostructures on strained silicon-on-insulator substrates with a thin oxide layer

    Fizika i Tekhnika Poluprovodnikov, 49:8 (2015),  1129–1135
  26. Plastic relaxation in GeSi layers on Si (001) and Si (115) substrates

    Fizika i Tekhnika Poluprovodnikov, 49:1 (2015),  21–24
  27. Transition from the two- to three-dimensional growth of Ge films upon deposition onto relaxed SiGe/Si(001) buffer layers

    Fizika i Tekhnika Poluprovodnikov, 47:3 (2013),  404–409
  28. Effect of silicon spacer thickness on the electroluminescence of multilayer structures with self-assembled Ge(Si)/Si(001) islands

    Fizika i Tekhnika Poluprovodnikov, 46:11 (2012),  1448–1452
  29. Photoluminescence line width of self-assembled Ge(Si) islands arranged between strained Si layers

    Fizika i Tekhnika Poluprovodnikov, 45:2 (2011),  202–206
  30. Study of the transition of the epitaxial Ge film from layer-to-layer to three-dimensional growth in heterostructures with strained SiGe sublayers

    Fizika i Tekhnika Poluprovodnikov, 44:4 (2010),  538–543
  31. Comparative analysis of photoluminescence and electroluminescence of multilayer structures with self-assembled Ge(Si)/Si(001) island

    Fizika i Tekhnika Poluprovodnikov, 42:3 (2008),  291–295
  32. Effect of growth temperature on photoluminescence of self-assembled Ge(Si) islands confined between strained Si layers

    Fizika i Tekhnika Poluprovodnikov, 41:11 (2007),  1375–1380
  33. Effect of tensile-strained Si layer on photoluminescence of Ge(Si) self-assembled islands grown on relaxed SiGe/Si(001) buffer layers

    Fizika i Tekhnika Poluprovodnikov, 41:2 (2007),  172–176
  34. Special features of the photoluminescence of self-assembled Ge(Si)/Si(001) islands grown on a strained Si$_{1-x}$Ge$_x$ layer

    Fizika i Tekhnika Poluprovodnikov, 40:3 (2006),  343–346
  35. Special features of the formation of Ge(Si) islands on the relaxed Si$_{1-x}$Ge$_x$/Si(001) buffer layers

    Fizika i Tekhnika Poluprovodnikov, 40:2 (2006),  235–239

© Steklov Math. Inst. of RAS, 2026