Prasad B

Публикации в базе данных Math-Net.Ru

1. Performance evaluation of inversion mode and junctionless dual-material double-surrounding gate Si nanotube MOSFET for 5-nm gate length
   
   Физика и техника полупроводников, 55:4 (2021),  355
2. Silicon nanowire parameter extraction using DFT and comparative performance analysis of SiNWFET and CNTFET devices
   
   Физика и техника полупроводников, 55:1 (2021),  83
3. Dual material gate engineering to reduce DIBLl in cylindrical gate all around Si nanowire MOSFET for 7-nm gate length
   
   Физика и техника полупроводников, 54:11 (2020),  1250