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ЖУРНАЛЫ // Computational nanotechnology // Архив

Comp. nanotechnol., 2017, выпуск 1, страницы 52–53 (Mi cn110)

НАНОСТРУКТУРИРОВАННЫЕ МАТЕРИАЛЫ

Properties of $\mathrm{GaAs/AlGaAs}$ heterophototransformators with holographic concentrators

M. A. Abdukadirova, Z. T. Azamatovb, N. A. Axmedovaa, A. S. Ganiyeva, R. A. Muminovc

a Tashkent University of Information Technology
b Tashkent State Technical University
c Physical-Technical Institute, Uzbekistan Academy of Sciences

Аннотация: Studied photovoltaic processes in $\mathrm{GaAs/AlGaAs}$ heterostructure solar cell with a spectral sensitivity in the range of $450\leq\lambda\leq850$ nm under holographic concentrator illumination. It is shown that with increasing of concentration of the solar flux to 10krat with a linear increase in short-circuit current and open circuit voltage efficiency reaches its maximum value.

Ключевые слова: solar sell, semi conduction, gallium arsenide, spektrowave diapazon, short circuit current, open circuit voltage, hologhraphic concentrator.

Язык публикации: английский



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