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Полупроводники
Synthesis and characterization of high-quality polycrystalline sample NiV$_2$O$_6$ by solid-state reaction technique
M. Atikur Rahman,
M. R. Akter,
M. Romana Khatun,
R. Sultana,
M. A. Razzaque Sarker
Аннотация:
Employing the solid-state reaction route, good quality polycrystalline sample NiV
$_2$O
$_6$ is prepared that has effective application in rechargeable Li-ion batteries. The raw materials NiO and V
$_2$O
$_5$ (purity
$>$ 99%) were used for the fabrication of NiV
$_2$O
$_6$. The phase formation and thermal stability of this sample were measured by thermogravimetric analyzer. The micro-structural feature of this sample was measured by scanning electron microscopy (SEM). The SEM images ensured that the product NiV
$_2$O
$_6$ is very uniform and well-separated and consists of large grain size of about 1–5
$\mu$m. The crystal structure and bonding characteristics of NiV
$_2$O
$_6$ were obtained by XRD diffractometer and FTIR spectroscopy. The X-ray diffraction data revealed the triclinic structure of NiV
$_2$O
$_6$ with space group P-1 and lattice parameters:
$a$ = 7.162
$\mathring{\mathrm{A}}$,
$b$ = 8.816
$\mathring{\mathrm{A}}$,
$c$ = 4.789
$\mathring{\mathrm{A}}$, and axial angles
$\alpha$ = 90.13
$^\circ$,
$\beta$ = 93.78
$^\circ$, and
$\gamma$ = 101.72
$^\circ$. The temperature-dependent electrical resistivity of NiV
$_2$O
$_6$ was measured by two-probe method which ensured the semiconducting nature of this phase. The electronic and optical properties were investigated by impedance analyzer and UV-Visible spectrophotometer. The calculated optical band gap of NiV
$_2$O
$_6$ is found to be 2.38 eV.
Ключевые слова:
crystal morphology, XRD, SEM, FTIR, electronic properties, optical properties.
Поступила в редакцию: 11.11.2019
Исправленный вариант: 30.01.2020
Принята в печать: 02.02.2020
Язык публикации: английский