Аннотация:
We report the results of scanning tunneling microscopy (STM) investigation of a controllable growth of $C_{60}$ adsorption on the Bi(0001)/Si(111) surface. Using UHV STM it has been shown that the most favorable sites for initial stage of $C_{60}$ adsorption are the double steps and domain boundaries. At $\sim1$ monolayer of $C_{60}$ coverage the modulation pattern caused by epitaxial relation between $C_{60}$ and $Bi$ unit cells has been observed. Increasing of $C_{60}$ coverage up to several monolayers results in the formation of highly crystalline molecular film.