N. N. Shlenskaya, A. S. Tutantsev, N. A. Belich, E. A. Goodilin, M. Graetzel, A. B. Tarasov, “Electrodeposition of porous CuSCN layers as hole-conducting material for perovskite solar cells”, Mendeleev Commun., 28:4 (2018), 378

Эта публикация цитируется в 10 статьях

Communications

Electrodeposition of porous CuSCN layers as hole-conducting material for perovskite solar cells

N. N. Shlenskaya^a, A. S. Tutantsev^a, N. A. Belich^a, E. A. Goodilin^abc, M. Graetzel^d, A. B. Tarasov^ac

^a Department of Materials Science, M.V. Lomonosov Moscow State University, Moscow, Russian Federation
^b N.S. Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences, Moscow, Russian Federation
^c Department of Chemistry, M.V. Lomonosov Moscow State University, Moscow, Russian Federation
^d Institute of Chemical Sciences and Engineering, Lausanne, Switzerland

Аннотация: One of the most promising among hole-conducting materials, CuSCN, was prepared for the first time in a form of porous layers for potential applications in inverted perovskite solar cells.

Язык публикации: английский

DOI: 10.1016/j.mencom.2018.07.012