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Mendeleev Commun., 2025, том 35, выпуск 5, страницы 546–549 (Mi mendc7287)

Communications

Effect of tert-butyl substituents in triphenylsulfonium cation on spectral properties and photochemical activity of photoacid generators

N. A. Kuznetsovaa, I. E. Kuznetsovb, N. V. Malimonenkoa, T. A. Pugachevab, V. G. Kurbatovbc, A. V. Lolaevab, M. E. Sideltsevb, S. V. Karpovb, Ya. V. Dorinab, G. V. Malkovb, A. V. Akkuratovb

a Joint-Stock Company Research Institute of Organic Intermediates and Dyes, 123001 Moscow, Russian Federation
b Federal Research Center of Problems of Chemical Physics and Medicinal Chemistry, Russian Academy of Sciences, 142432 Chernogolovka, Moscow Region, Russian Federation
c Yaroslavl State Technical University, 150023 Yaroslavl, Russian Federation


Аннотация: Four photoacid generators such as triphenylsulfonium triflate and nonaflate, 4-tert-butylphenyl(diphenyl)sulfonium nonaflate and tris(4-tert-butylphenyl)sulfonium nonaflate were synthesized, and their spectral characteristics were investigated in the polymer matrix. The dependence of the photosensitivity of resist films on the efficiency of absorption of actinic radiation and the quantum yields of acid generation was found. Triphenylsulfonium triflate salt and tris(4-tert-butylphenyl) sulfonium nonaflate were shown to be promising photoacid generators with a resist sensitive to irradiation by ArF and KrF excimer lasers, respectively.

Ключевые слова: microelectronics, photoacid generator, quantum yield, chemically amplified resist, sulfonium derivatives, Dill C parameter.

Поступила в редакцию: 07.02.2025
Принята в печать: 16.04.2025

Язык публикации: английский

DOI: 10.71267/mencom.7743



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