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ЖУРНАЛЫ // Наносистемы: физика, химия, математика // Архив

Наносистемы: физика, химия, математика, 2023, том 14, выпуск 6, страницы 699–704 (Mi nano1237)

CHEMISTRY AND MATERIAL SCIENCE

Surface topology, electrophysical properties and formation mechanism of tin(ii) sulfide thin films

N. S. Kozhevnikovaa, L. N. Maskaevab, A. N. Enyashina, A. P. Tyutyunnika, O. A. Lipinaa, I. O. Selyanina, V. F. Markovb

a Institute of Solid State Chemistry of the Ural Branch of RAS, Ekaterinburg, Russia
b Ural Federal University, Ekaterinburg, Russia

Аннотация: Photosensitive nanocrystalline SnS films with a size of coherent X-ray scattering regions of about 30 nm were obtained by chemical bath deposition. It has been demonstrated that the deposition time affects significantly both microstructure and thickness of the film as well as the size of the particles' agglomerates forming the film. The current sensitivity of the obtained films was studied. All synthesized films, regardless of the duration of synthesis, reveal $p$-type conductivity due to Sn vacancies. Atomic force microscopy measurements and fractal approach provide a detailed description of the processes occurring during film formation. The characteristics of the fabricated SnS films are potentially useful for design of advanced absorbing layers within thin film solar cells.

Ключевые слова: tin(II) sulfide, thin films, chemical bath deposition, $p$-type conductivity, quantum-chemical calculations, formation mechanism.

Поступила в редакцию: 17.10.2023
Исправленный вариант: 25.10.2023
Принята в печать: 08.11.2023

Язык публикации: английский

DOI: 10.17586/2220-8054-2023-14-6-699-704



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