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ЖУРНАЛЫ // Наносистемы: физика, химия, математика // Архив

Наносистемы: физика, химия, математика, 2019, том 10, выпуск 6, страницы 720–724 (Mi nano489)

CHEMISTRY AND MATERIAL SCIENCE

Methodology of analyzing the InSb semiconductor quantum dots parameters

A. I. Mikhailov, V. F. Kabanov, M. V. Gavrikov

Saratov State University, Department of Nanoand Biomedical Technologies, Astrakhanskaya, 83, Saratov, 410012, Russia

Аннотация: The investigation of indium antimonide quantum dots has been carried out by the methods of differential normalized tunnel current-voltage characteristics, electron microscopy, particle size analysis and spectral dependence of the absorption coefficient. Qualitatively and quantitatively consistent measurement results were obtained with an error less than 15 %. It is concluded that the analysis of normalized differential tunnel current-voltage characteristics is an effective method of express-analysis that can be used in investigation of quantum-sized objects properties.

Ключевые слова: quantum dots, indium antimonide, differential tunnel current-voltage characteristics, energy spectrum.

Поступила в редакцию: 12.09.2019
Исправленный вариант: 01.11.2019

Язык публикации: английский

DOI: 10.17586/2220-8054-2019-10-6-720-724



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