Effect of oxide composition (V$_{2}$O$_{5}$+Al$_{2}$O$_{3}$) via gas phase on the thermal oxidation of InP

The effect of the oxide-chemostimulator V$_{2}$O$_{5}$ and the inert component Al$_{2}$O$_{3}$ binary compositions on the thermal oxidation of InP have been studied. The area of negative deviation of nanoscale oxide film thickness on InP from the additive joint effect has been established with a minimum for a composition of 20% Al$_{2}$O$_{3}$ + 80% V$_{2}$O$_{5}$. A decrease in the transit efficiency effect of V$_{2}$O$_{5}$ chemostimulator in composition with Al$_{2}$O$_{3}$ has been associated with an intensification of the transformation of V$_{2}$O$_{5}$ into V$_{2}$O$_{3}$, which is not an oxygen transitor.