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ЖУРНАЛЫ // Физика и техника полупроводников // Архив

Физика и техника полупроводников, 2018, том 52, выпуск 5, страница 513 (Mi phts5839)

XXV International Symposium ''Nanostructures: Physics and Technology'', Saint Petersburg, June 26-30, 2017
Nanostructure Technology

Molecular beam epitaxy of materials interfaces with atomic precision

Klaus H. Ploog

Paul Drude Institute for Solid State Electronics, 101117 Berlin, Germany

Аннотация: In this contribution a few selected examples to engineer material interfaces in nanostructured solids with atomic precision by means of molecular beam epitaxy (MBE) are presented. The examples include 2$D$ electron gas systems for quantum transport and mesoscopic physics, quantum cascade lasers, Sb-based materials, ferromagnet-semiconductor heterostructures, as well as oxide materials for electronics and quantum physics. Finally, the prospects to fabricate novel van-der-Waals heterostructures are briefly discussed.

Язык публикации: английский


 Англоязычная версия: Semiconductors, 2018, 52:5, 615–617

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