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ЖУРНАЛЫ // Физика и техника полупроводников // Архив

Физика и техника полупроводников, 2018, том 52, выпуск 5, страница 515 (Mi phts5841)

XXV International Symposium ''Nanostructures: Physics and Technology'', Saint Petersburg, June 26-30, 2017
Nanostructure Technology

Metal-semiconductor nanoheterostructures with an AlGaN quantum well and in-situ formed surface Al nanoislands

E. A. Evropeytsev, A. N. Semenov, D. V. Nechaev, V. N. Zhmerik, V. Kh. Kaibyshev, S. I. Troshkov, P. N. Brunkov, A. A. Usikova, S. V. Ivanov, A. A. Toropov

Ioffe Institute, 194021 St. Petersburg, Russia

Аннотация: We report on fabrication and studies of composite heterostuctures consisting of an Al$_{0.55}$Ga$_{0.45}$N/Al$_{0.8}$Ga$_{0.2}$N quantum well and surface Al nanoislands, grown by plasma-assisted molecularbeam epitaxy on $c$-sapphire substrates. The influence of a substrate temperature varied between 320 and 700$^\circ$C on the size and density of the deposited Al nanoislands is evaluated. The effect of Al nanoislands on decay kinetics of the quantum well middle-ultraviolet photoluminescence has been investigated by time resolved photoluminescence. The samples with the maximum density of Al nanoislands of 10$^8$ cm$^{-2}$ and lateral dimensions in the range of 100–500 nm demonstrated shortening of the photoluminescence lifetime, induced by interaction of the emitting quantum well and the plasmonic metal particles.

Язык публикации: английский


 Англоязычная версия: Semiconductors, 2018, 52:5, 622–624

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