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ЖУРНАЛЫ // Физика и техника полупроводников // Архив

Физика и техника полупроводников, 2018, том 52, выпуск 4, страница 469 (Mi phts5865)

Эта публикация цитируется в 10 статьях

XXV International Symposium ''Nanostructures: Physics and Technology'', Saint Petersburg, June 26-30, 2017
Optoelectronics, optical properties

Hybrid GaAs/AlGaAs nanowire – quantum dot system for single photon sources

G. E. Cirlinabcd, R. R. Reznikabcd, I. V. Shtromac, A. I. Khrebtovab, Yu. B. Samsonenkoabc, S. A. Kukushkine, T. Kasamaf, N. Akopianf

a St. Petersburg Academic University, Russian Academy of Sciences, 194021 St. Petersburg, Russia
b ITMO University, 197101 St. Petersburg, Russia
c Institute for Analytical Instrumentation, Russian Academy of Sciences, 190103 St. Petersburg, Russia
d Peter the Great Saint Petersburg Polytechnic University, 195251 St. Petersburg, Russia
e Institute of Problems of Mechanical Engineering, Russian Academy of Sciences, 199178 St. Petersburg, Russia
f DTU Photonics,Technical University of Denmark, Kgs. Lyngby, Denmark 2800

Аннотация: III–V nanowires, or a combination of the nanowires with quantum dots, are promising building blocks for future optoelectronic devices, in particular, single-photon emitters, lasers and photodetectors. In this work we present results of molecular beam epitaxial growth of combined nanostructures containing GaAs quantum dots inside AlGaAs nanowires on a silicon substrate showing a new way to combine quantum devices with Si technology.

Язык публикации: английский


 Англоязычная версия: Semiconductors, 2018, 52:4, 462–464

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