L. V. Danilov, M. P. Mikhailova, R. V. Levin, G. G. Konovalov, E. V. Ivanov, I. A. Andreev, B. V. Pushnyi, G. G. Zegrya, “Enhancement of photoconductivity by carrier screening effect in $n$-GaSb/$n$-InAs/$p$-GaSb heterostructure with single deep quantum well”, Физика и техника полупроводников, 2018, том 52, выпуск 4,страница 476

Эта публикация цитируется в 1 статье

XXV International Symposium ''Nanostructures: Physics and Technology'', Saint Petersburg, June 26-30, 2017
Quantum wells, Quantum wires, Quantum dots, band structure

Enhancement of photoconductivity by carrier screening effect in $n$-GaSb/$n$-InAs/$p$-GaSb heterostructure with single deep quantum well

L. V. Danilov, M. P. Mikhailova, R. V. Levin, G. G. Konovalov, E. V. Ivanov, I. A. Andreev, B. V. Pushnyi, G. G. Zegrya

Ioffe Institute, 194021 St. Petersburg, Russia

Аннотация: $n$-GaSb/$n$-InAs/$p$-GaSb heterostructure with a single InAs QW was grown for the first time by MOVPE. Photocurrent spectra were obtained at reverse bias in the range from 0 to 0.8 V. It was shown that the photocurrent increases nonlinearly. The maximum of differential photoconductivity is archived at low applied voltage up to 0.2 V. This effect was explained by electrostatic screening of electrons localized in QW.

Язык публикации: английский