Физика и техника полупроводников,
2018, том 52, выпуск 4,страница 480(Mi phts5876)
XXV International Symposium ''Nanostructures: Physics and Technology'', Saint Petersburg, June 26-30, 2017 Quantum wells, Quantum wires, Quantum dots, band structure
Red single-photon emission from InAs/AlGaAs quantum dots
Аннотация:
We report on single-photon emission of InAs/AlGaAs self-assembled quantum dots (QDs) grown by molecular beam epitaxy. By varying the growth conditions the QDs luminescence could be tuned over a wide wavelength range from 0.64 to 1 $\mu$m, including red part of the visible spectrum. Emission properties of individual QDs are investigated by micro-photoluminescence ($\mu$-PL) spectroscopy using 500-nm-size etched mesa structures. Autocorrelation functions of photons from single QDs, measured in the wide spectral range demonstrate antibunching effect at zero delay time with a value of $g^{(2)}(0)\sim$ 0.17 that is a clear evidence of non-classical light.