RUS  ENG
Полная версия
ЖУРНАЛЫ // Физика и техника полупроводников // Архив

Физика и техника полупроводников, 2016, том 50, выпуск 6, страницы 811–815 (Mi phts6444)

Эта публикация цитируется в 2 статьях

Микро- и нанокристаллические, пористые, композитные полупроводники

Inter atomic force constants of binary and ternary tetrahedral semiconductors

Suresh Pala, R. K. Tiwaria, D. C. Guptaa, Vibhav K. Saraswatb, A. S. Vermab

a Department of Physics, Jiwaji University, Gwalior, India
b Department of Physics, Banasthali Vidyapith, Rajasthan, India

Аннотация: In this paper, we present the expressions relating the inter atomic force constants like as bond-stretching force constant ($\alpha$ in $N/m$) and bond-bending force constant ($\beta$ in $N/m$) for the binary (zinc blende structure) and ternary (chalcopyrite structure) semiconductors with the product of ionic charges (PIC) and crystal ionicity ($f_{i}$). Interatomic force constants of these compounds exhibit a linear relationship; when plot a graph between Interatomic force constants and the nearest neighbor distance $d$ ($\mathring{\mathrm{A}}$) with crystal ionicity ($f_{i}$), but fall on different straight lines according to the product of ionic charges of these compounds. A fairly good agreement has been found between the observed and calculated values of the $\alpha$ and $\beta$ for binary and ternary tetrahedral semiconductors.

Поступила в редакцию: 16.06.2015
Принята в печать: 12.11.2015

Язык публикации: английский


 Англоязычная версия: Semiconductors, 2016, 50:6, 795–800

Реферативные базы данных:


© МИАН, 2024