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ЖУРНАЛЫ // Физика и техника полупроводников // Архив

Физика и техника полупроводников, 2020, том 54, выпуск 12, страница 1385 (Mi phts6684)

Эта публикация цитируется в 1 статье

NANOSTRUCTURES : PHYSICS AND TECHNOLOGY 28th International Symposium (Minsk, Republic of Belarus, September, 2020)
Graphene

On the origin of photocurrents in pristine graphene

Yu. B. Vasilyev

Ioffe Institute, 194021 St. Petersburg, Russia

Аннотация: Recently Ma et al. (Nature Nanotech., 14, 145, 2019) reported an intrinsic photocurrent in graphene, which occurs as the authors believe “in a different parameter regime from all the previously observed photothermoelectric or photovoltaic photocurrents in graphene”. Here we present an alternative – obvious and transparent explanation of such experiments. We demonstrate that the photo effect occurs in the $p$$n$ junctions formed in graphene samples containing two regions of different widths with different particle concentrations. This difference in concentration for various sample widths is found to result from edge doping of samples.

Ключевые слова: graphene, photocurrents, $p$$n$ junctions.

Язык публикации: английский


 Англоязычная версия: Semiconductors, 2020, 54:12, 1664–1665


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