P. E. Teterin, D. V. Averyanov, Yu. G. Sadofyev, O. E. Parfenov, I. A. Likhachev, V. G. Storchak, “Erratum to: “Growth of EuO/Si and EuO/SrO/Si heteroepitaxial structures by molecular-beam epitaxy””, Физика и техника полупроводников, 2015, том 49, выпуск 3,страница 431

Статьи, опубликованные в английской версии журнала

Erratum to: “Growth of EuO/Si and EuO/SrO/Si heteroepitaxial structures by molecular-beam epitaxy”

P. E. Teterin^a, D. V. Averyanov^ab, Yu. G. Sadofyev^ac, O. E. Parfenov^a, I. A. Likhachev^a, V. G. Storchak^a

^a National Research Centre "Kurchatov Institute", Moscow, 123182, Russia
^b National Engineering Physics Institute "MEPhI", Moscow, 115409, Russia
^c P. N. Lebedev Physical Institute, Russian Academy of Sciences, Moscow, 119991, Russia

Язык публикации: английский

Англоязычная версия: Semiconductors, 2015, 49:3, 419