MOS solar cells with oxides deposited by sol-gel spin-coating techniques

The metal-oxide-semiconductor (MOS) solar cells with sol-gel derived silicon dioxides (SiO$_2$) deposited by spin coating are proposed in this study. The sol-gel derived SiO$_2$ layer is prepared at low temperature of 450$^\circ$C. Such processes are simple and low-cost. These techniques are, therefore, useful for large-scale and large-amount manufacturing in MOS solar cells. It is observed that the short-circuit current density $(I_{\mathrm{sc}})$ of 2.48 mA, the open-circuit voltage $(V_{\mathrm{os}})$ of 0.44 V, the fill factor $(FF)$ of 0.46 and the conversion efficiency ($\eta$%) of 2.01% were obtained by means of the current-voltage (I–V) measurements under AM 1.5 (100 mW/cm$^2$) irradiance at 25$^\circ$C in the MOS solar cell with sol-gel derived SiO$_2$.