RUS  ENG
Полная версия
ЖУРНАЛЫ // Физика и техника полупроводников // Архив

Физика и техника полупроводников, 2013, том 47, выпуск 10, страницы 1310–1312 (Mi phts8029)

Эта публикация цитируется в 1 статье

Электронные свойства полупроводников

Obtaining of SmS based semiconducting material and investigation of its electrical properties

V. V. Kaminskiia, Shinji Hiraib, Toshihiro Kuzuyab, S. M. Solovieva, N. N. Stepanova, N. V. Sharenkovaa

a Ioffe Institute, St. Petersburg
b Muroran Institute of Technology, 050-8585 Muroran, Hokkaido, Japan

Аннотация: Semiconductor samarium monosulfide polycrystals obtained by reaction between samarium trihydride (SmH$_3$) and its sesquisulfide were studied. The temperature, baric and frequency dependences of the resistivity and structural features of the samples were investigated. It is shown that the value of X-ray coherent scattering region is extremely small for SmS samples, 320 $\mathring{\mathrm{A}}$; critical pressure of semiconductor-metal phase transition is higher than in the samples, obtained by other methods, 0.88 GPa; the temperature dependence of the resistivity has metallic behaviour. Hopping mechanism of electron transport was found. All these features are explained by more defective structure of the polycrystalline SmS samples.

Поступила в редакцию: 19.02.2013
Принята в печать: 25.02.2013

Язык публикации: английский


 Англоязычная версия: Semiconductors, 2013, 47:10, 1298–1300

Реферативные базы данных:


© МИАН, 2025