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ЖУРНАЛЫ // Физика и техника полупроводников // Архив

Физика и техника полупроводников, 2013, том 47, выпуск 12, страницы 1636–1641 (Mi phts8093)

Эта публикация цитируется в 17 статьях

Изготовление, обработка, тестирование материалов и структур

Deposition and characterization of molybdenum thin films using DC-plasma magnetron sputtering

Majid Khana, Mohammad  Islamb

a School of Chemical & Materials Engineering, National University of Sciences & Technology, Islamabad 44000, Pakistan
b Center of Excellence for Research in Engineering Materials, Advanced Manufacturing Institute, P.O. Box 800, King Saud University, Riyadh 11421, Saudi Arabia

Аннотация: Molebdenum (Mo) thin films were deposited on well-cleaned soda-lime glass substrates using DC-plasma magnetron sputtering. In the design of experiment, deposition was optimized for maximum beneficial characteristics by monitoring effect of process variables such as deposition power (100–200 W). Their electrical, structural and morphological properties were analyzed to study the effect of these variables. The electrical resistivity of Mo thin films could be reduced by increasing deposition power. Within the range of analyzed deposition power, Mo thin films showed a monocrystalline nature and the crystallites were found to have an orientation along [110] direction. The surface morphology of thin films showed that a highly dense microstructure has been obtained. The surface roughness of films increased with deposition power. Adhesion of Mo thin films could be improved by increasing the deposition power. Atomic force microscopy was used for the topographical study of the films and to determine the roughness of the films. X-ray diffractrometer and scanning electron microscopy analysis were used to investigate the crystallinity and surface morphology of the films. Hall effect measurement system was used to find resistivity, carrier mobility and carrier density of deposited films. The adhesion test was performed using scotch hatch tape adhesion test. Mo thin films prepared at deposition power of 200 W, substrate temperature of 23$^\circ$C and Ar pressure of 0.0123 mbar exhibited a monocrystalline structure with an orientation along (110) plane, thickness of $\sim$ 550 nm and electrical resistivity value of 0.57 $\cdot$ 10$^{-4}$ Omega $\cdot$ cm.

Поступила в редакцию: 24.04.2012
Принята в печать: 18.09.2013

Язык публикации: английский


 Англоязычная версия: Semiconductors, 2013, 47:12, 1610–1615

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