Theoretical and Mathematical Physics
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Simulation of properties of images with atomic resolution in a scanning probe microscope A. A. Potapov, S.Sh. Rekhviashvili
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803 |
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Gases and Fluids
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On the hydrothermodynamics of the icing of a wing profile in the air-crystalline flow A. V. Kashevarov, V. S. Levchenko, A. B. Miller, Yu. F. Potapov, A. L. Stasenko
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808 |
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Plasma
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Short thermionic-cathode discharge in alkaline-earth metal vapor A. A. Bogdanov, V. B. Kaplan, A. M. Martsinovskiy
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815 |
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Streamers at the subnanosecond breakdown of argon and nitrogen in nonuniform electric field at both polarities D. V. Beloplotov, M. I. Lomaev, D. A. Sorokin, V. F. Tarasenko
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819 |
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Microstructure of a spark discharge in air in a point–plane gap K. I. Almazova, A. N. Belonogov, V. V. Borovkov, E. V. Gorelov, I. V. Morozov, A. A. Tren'kin, S. Yu. Kharitonov
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827 |
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Filling of a plane slit volume with a glow discharge in a transverse magnetic field and its effect on the discharge contraction M. S. Mokrov, Yu. P. Raizer
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832 |
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Solids
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Shape memory effects in Cu–Al–Ni single crystals and linear and rotary engines on their basis S. A. Pul'nev, A. I. Pryadko, S. G. Yastrebov, V. I. Nikolaev
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843 |
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On a possibility of the overgrowth of diamonds in the hydrocarbon atmosphere S. K. Brantov, V. B. Efimov
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850 |
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Origin of elastic–plastic deformation invariant L. B. Zuev, V. I. Danilov, S. A. Barannikova, N. A. Ploskov
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855 |
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Physical science of materials
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Analysis of the vacancy system of restructured zinc by the positron annihilation method E. M. Solov’ev, B. V. Spitsyn, R. S. Laptev, A. M. Lider, Yu. S. Bordulev, A. A. Mikhailov
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860 |
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Radiation-induced electrical conductivity of nanocomposite materials N. S. Dyuryagina, A. P. Yalovetz
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864 |
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Solid-State Electronics
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Combined technology fabrication of spin-valve magnetoresistive elements and micromagnets V. V. Amelichev, P. A. Belyakov, D. V. Kostyuk, D. V. Vasilyev, E. P. Orlov, Yu. V. Kazakov, S. I. Kasatkin, A. I. Krikunov
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874 |
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Physics of nanostructures
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Dielectric spectroscopy of strongly correlated electronic states of vanadium dioxide A. V. Ilinskiy, R. A. Castro, E. I. Nikukin, E. B. Shadrin
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877 |
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Formation mechanism of argon clathrates with carbon dendrites M. P. Danilaev, E. M. Zueva, E. A. Bogoslov, M. S. Pudovkin, Yu. E. Pol'skii
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883 |
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Optics
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Microturbines formed with the aid of direct laser recording on photoresist R. V. Skidanov, O. Yu. Moiseev, S. V. Ganchevskaya
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888 |
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Analysis of different contributions into the magnetooptical signal of magnetophotonic crystal type three-dimensional structures N. Yu. Zvezdin, V. A. Paporkov, A. V. Prokaznikov, I. S. Tsarev
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892 |
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Acoustics, Acoustoelectronics
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Acousto-optic diffraction in paratellurite by a slow acoustic mode. Increase of diffraction efficiency of divergent light S. N. Antonov, A. L. Filatov
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902 |
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Radiophysics
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Effect of ionosphere on the excitation of electromagnetic field at extremely low and lower frequencies in the near-field zone E. D. Tereshchenko, P. E. Tereshchenko, A. E. Sidorenko, V. F. Grigor'ev, A. A. Zhamaletdinov
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907 |
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Electrophysics, electron and ion beams, physics of accelerators
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High-efficiency electron source with a hollow cathode in technologies of thin film deposition and surface treatment under forevacuum pressures V. G. Shchukin, V. O. Konstantinov, V. S. Morozov
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914 |
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Physical electronics
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Stability of field emission from a single carbon nanotube S. V. Bulyarskii, A. A. Dudin, A. V. Lakalin, A. P. Orlov, A. A. Pavlov, R. M. Ryazanov, A. A. Shamanaev
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920 |
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The influence of film thickness on annealing-induced grain growth in Pt films R. V. Selyukov, V. V. Naumov, S. V. Vasilev
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926 |
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Biomedical physics
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The complex nature of thermal phase transitions in albumin solutions A. O. Vonti, A. V. Ilinskiy, V. M. Kapralova, E. B. Shadrin
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934 |
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Experimental instruments and technique
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A method of video goniography to study the morphology of the lateral surface of profiled monocrystals and the device for its implementation S. I. Bakholdin, V. N. Maslov
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943 |
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Brief Communications
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On the question of the source of the apokamp È. A. Sosnin, V. A. Panarin, V. S. Skakun, V. F. Tarasenko
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951 |
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Influence of dopant incomplete ionization on the capacitance of a reverse-biased 4H-SiC $p^{+}$–$i$–$n^{+}$ diode P. A. Ivanov, A. S. Potapov, I. V. Grekhov
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955 |